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【IRF3205ZS Transistors - FETs, MOSFETs - Single ChipMall】【1254SYGT/S530E2】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IRF3205ZS

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 55V 75A D2PAK

Series:

HEXFET

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

110nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

3450pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

170W (Tc)

Rds On (Max) @ Id, Vgs:

6.5 mOhm @ 66A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

D2PAK

Package / Case:

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Search For IRF3205ZS - IRF3205ZS Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
Region
Company
Warranty

IRF3205ZS

IRF3205ZS ChipMall3000China
CHIPMALL ELECTRONICS LIMITED  3
STRCWarranty

IRF3205ZS

IRF3205ZS IR16+55000Taiwan
Yingxinyuan INT'L (Group) Limited  15
Warranty

IRF3205ZS

IRF3205ZS IR13+13800Hong Kong
A & C Int'l Electronics Co.  11

IRF3205ZS

IRF3205ZS IR06+500China
Amos Electronics Co., Limited  11

IRF3205ZS

IRF3205ZS Infineon Technologies2016+1000China
MY Group (Asia) Limited  13

1254SYGD/S530-E2

1254SYGD/S530-E2 EVERLIGHT2015+80China
Bonase Electronics (HK) Co., Limited  12

1254SYGT/S530-E1

1254SYGT/S530-E1 EVERLIGHT2011300000China
HK Xinyuhang Electronic Co.,Ltd 12

1254SYGD/S530-E2

1254SYGD/S530-E2 EVERLIGHT80China
YTY Electronics Limited4

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1254SYGT/S530E2 | KPBVA3010SURKMGKC | AS1104T | GRM0335C1H2R6WD01D | GRM0335C1H2R9WD01D | 0710219 | IRF3205ZL | IRF3205ZLPBF | 1825PC684KAT1A | GRM0335C1H3R0BD01D
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