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【IRF3708S Transistors - FETs, MOSFETs - Single IR】【1280G20K10】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IRF3708S

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 30V 62A D2PAK

Series:

HEXFET

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

62A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

24nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

2417pF @ 15V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

87W (Tc)

Rds On (Max) @ Id, Vgs:

12 mOhm @ 15A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

D2PAK

Package / Case:

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Search For IRF3708S - IRF3708S Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
Region
Company
Warranty

IRF3708S

IRF3708S IR13+13800Hong Kong
A & C Int'l Electronics Co.  11
STRCWarranty

IRF3708S

IRF3708S IR16+350000Taiwan
Yingxinyuan INT'L (Group) Limited  15

IRF3708S

IRF3708S IR5341China
Ande Electronics Co., Limited  12

IRF3708S

IRF3708S IR07+10000China
Far East Electronics Technology Limited  12

IRF3708S

IRF3708S Infineon Technologies2016+1000China
MY Group (Asia) Limited  13
Warranty

1280G20K10%

1280G20K10% Vishay6623China
Nosin (HK) Electronics Co.  12

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1280G20K10 | IRF3707ZL | 07N3110PS0S960S12 | 07N3200 | 07N3200DS0S9Y0P1C | 1825SA102JAT1ASB | IRF3707ZS | IRF3707ZSPBF | 1825SA102KAT1A | 07N3210DS0S960P0C
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