Hong Kong Inventory Limited

【IRF3710F IR】【BCV27/DG/B2】【V62/0461501XE】HKinventory - Suppliers in 2017【Price】【Datasheet PDF】USA

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IRF3710F, BCV27/DG/B2, V62/0461501XE
 Part NumberBrandD/CQtyCompany
IRF3710FIR14+14150Signal (HK) Electronic Technology Co., Limited   4
IRF3710IR12+4500SKYLETTE HK TRADING SERVICE LIMITED   1
IRF3710BFIRF59870Kunlida Electronics (HK) Limited    4
IRF3710IR06+30ShenZhen HengBin Technology Co.,Limited   5
IRF3710IR16+30000APEX ELECTRONICS CO., LIMITED   2
BCV27/DG/B2NXP10+3000Shenzhen Chuangxinda Electronic-Tech Co.,Ltd    14
BCV27/DG/B2
 
NXP10+4060KYNIX SEMICONDUCTOR HONG KONG LIMITED    3
BCV27/DG/B2NXP10+6000Taiwan Anprosperous Technology Co.,Limited   11
BCV27/FFPPHILIPS13+150000TOP-Q COMPONENT PTE. LTD   3
V62/04615-01XETexas Instruments34042HongKong Wanghua Technology Limited   2
V62/04615-01XETI20141000000Joel International Co., Limited   2
V62/04733-02YETI3890KWL Electronics Internations Trade Co., Limited    10
V62/04603-02XATI09+1942Bossion International Pte. Ltd    5
V62/04608-01XETI2015+240Bonase Electronics (HK) Co., Limited    11

IRF3710F Description

IRF3710 . HEXFET Power MOSFET. 09/15/09. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 0.75. R CS. Case-to-Sink, Flat, Greased Surface. 0.50. Uses IRF3710 data and test conditions. **When mounted on 1 square PCB (FR- 4 or G-10 Material). For recommended footprint and soldering techniques refer Uses IRF3710 data and test conditions. Parameter. Min. Typ. Max. Units. Conditions. IS. Continuous Source Current. MOSFET symbol. (Body Diode) . IRF3710PbF. HEXFET Power MOSFET. 07/23/10. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 0.75. R CS. Case-to-Sink, Flat, Greased Surface. Mar 16, 1998 (See Figure 11). t=60s, =60Hz. ISD 28A, di/dt 460A/ s, VDD V(BR) DSS,. TJ 175 C. Uses IRF3710 data and test conditions.

Related Part Number

IRF3710L | IRF3710NS | IRF3710S | IRF3710Z | IRF3711 | IRF3711SPBF | IRF3711ZSPBF | IRF3713 | IRF3717

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IRF3710F Ref.: [hkinbatch20161020] [HGCacheDateZOITOIZZ] [HGReferer_STC_Overview]
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