【IRF3710F IR】【BCV27/DG/B2】【V62/0461501XE】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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IRF3710F Description

IRF3710 . HEXFET Power MOSFET. 09/15/09. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 0.75. R CS. Case-to-Sink, Flat, Greased Surface. 0.50. Uses IRF3710 data and test conditions. **When mounted on 1 square PCB (FR- 4 or G-10 Material). For recommended footprint and soldering techniques refer Uses IRF3710 data and test conditions. Parameter. Min. Typ. Max. Units. Conditions. IS. Continuous Source Current. MOSFET symbol. (Body Diode) . IRF3710PbF. HEXFET Power MOSFET. 07/23/10. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 0.75. R CS. Case-to-Sink, Flat, Greased Surface. Mar 16, 1998 (See Figure 11). t=60s, =60Hz. ISD 28A, di/dt 460A/ s, VDD V(BR) DSS,. TJ 175 C. Uses IRF3710 data and test conditions.
1 - 12 of 12 Record(s)
Hot Offer
 Part NumberBrandD/CQtyCompany

IRF3710PBF

IR14+450SY TIMES TECHNOLOGY LIMITED    2

IRF3710F, BCV27/DG/B2, V62/0461501XE
 Part NumberBrandD/CQtyCompany

IRF3710F

IR14+14150Signal (HK) Electronic Technology Co., Limited   5

IRF3710PBF
 

IR15+620490Sinno Electronics Co., Limited    8

IRF3710PBF
 

IR15+6000Royal Chip Technology Co., Limited   2

IRF3710BF

IRF59870Kunlida Electronics (HK) Limited    5

BCV27/DG/B2

NXP17+28000CP MICRO-ELECTRON (HK) INDUSTRIAL CO., LIMITED   1

BCV27/DG/B2

NXP5741Baluoke (HK) Co.,Limited  1

V62/04615-01XE

Texas Instruments34042HongKong Wanghua Technology Limited   3

V62/04603-02XA

Texas Instruments7883SSF Group (Asia) Limited    10

V62/04733-02YE

TI3890KWL Electronics Internations Trade Co., Limited    11

V62/04603-02XA

TI09+1942Bossion International Pte. Ltd    6

V62/04608-01XE

TI2015+240Bonase Electronics (HK) Co., Limited    12

Related Part Number

BCV27/DG/B2 | V62/0461501XE | IRF3708 | IRF3708 | IRF3708L | IRF3709 | IRF3709Z | IRF3709ZSPBF | IRF3710 | IRF3710 | IRF3710/70N10
IRF3710F Ref.:
[hkinbatch20171020]
[HGCacheDateZOIBOIZA]
[HGReferer_STC_Overview]
[HKIN20171020GESTYLE]

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