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IRF3710F IRF3710 . HEXFET Power MOSFET. 09/15/09. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 0.75. R CS. Case-to-Sink, Flat, Greased Surface. 0.50. Uses IRF3710 data and test conditions. **When mounted on 1 square PCB (FR- 4 or G-10 Material). For recommended footprint and soldering techniques refer Uses IRF3710 data and test conditions. Parameter. Min. Typ. Max. Units. Conditions. IS. Continuous Source Current. MOSFET symbol. (Body Diode) . IRF3710PbF. HEXFET Power MOSFET. 07/23/10. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 0.75. R CS. Case-to-Sink, Flat, Greased Surface. Mar 16, 1998 (See Figure 11). t=60s, =60Hz. ISD 28A, di/dt 460A/ s, VDD V(BR) DSS,. TJ 175 C. Uses IRF3710 data and test conditions. ...
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