Hong Kong Inventory Limited

【IRF3710F IR】【BCV27/DG/B2】【V62/0461501XE】HKinventory - Suppliers in 2016【Price】【Datasheet PDF】USA

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IRF3710F, BCV27/DG/B2, V62/0461501XE
 Part NumberBrandD/CQtyCompany
IRF3710FIR14+14150Signal (HK) Electronic Technology Co., Limited   4
IRF3710IR5000United Sources Industrial Enterprises   16
IRF3710PBFMicrochip39035PartsTech (HK) Co., Ltd.   13
IRF3710BFIRF59870Kunlida Electronics (HK) Limited    4
BCV27/DG/B2NXP10+3000Shenzhen Chuangxinda Electronic-Tech Co.,Ltd    13
BCV27/DG/B2NXP10+3000Sinno Electronics Co., Limited    7
BCV27/DG/B2NXP10+6000Taiwan Anprosperous Technology Co.,Limited   10
V62/04603-02XATI09+1942Bossion International Pte. Ltd    5
V62/04608-01XETI2015+240Bonase Electronics (HK) Co., Limited    10
V62/04733-02YETI3890KWL Electronics Internations Trade Co., Limited    10
V62/04603-02XATexas Instruments7883SSF Group (Asia) Limited    9
V62/04726-01XETI200931Sky-Chips Co., Limited    6

IRF3710F Description

IRF3710 . HEXFET Power MOSFET. 09/15/09. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 0.75. R CS. Case-to-Sink, Flat, Greased Surface. 0.50. Uses IRF3710 data and test conditions. **When mounted on 1 square PCB (FR- 4 or G-10 Material). For recommended footprint and soldering techniques refer Uses IRF3710 data and test conditions. Parameter. Min. Typ. Max. Units. Conditions. IS. Continuous Source Current. MOSFET symbol. (Body Diode) . IRF3710PbF. HEXFET Power MOSFET. 07/23/10. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 0.75. R CS. Case-to-Sink, Flat, Greased Surface. Mar 16, 1998 (See Figure 11). t=60s, =60Hz. ISD 28A, di/dt 460A/ s, VDD V(BR) DSS,. TJ 175 C. Uses IRF3710 data and test conditions.

Related Part Number

IRF3710L | IRF3710NS | IRF3710S | IRF3710Z | IRF3711 | IRF3711SPBF | IRF3711ZSPBF | IRF3713 | IRF3717

IRF3710F Related Keywords in 2016 USA

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IRF3710F Ref.: [hkinbatch20160715] [HGReferer_STC_Overview]
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