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【IRF4905S IR】【BCW61AMTF】【AT88SC153SU】HKinventory - Suppliers in 2017【Price】【Datasheet PDF】USA

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Belt (HK) Electronics Co, Win-True Electronics (HK) Co.,Limited ...
Product Information1 - 15 of 15 Record(s) PREV Page NEXT
Part NumberPart Number BrandD/CQtyCountry /


IRF4905S IR14+10000China
Belt (HK) Electronics Co  11


IRF4905S IR16+6500China
Win-True Electronics (HK) Co.,Limited  3


IRF4905S IR16+60000Taiwan
Yingxinyuan INT'L (Group) Limited  14


IRF4905S IR03+554China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  14


IRF4905S IR1539+50China
Lattice International Trading Co., Limited 8


BCW61A-MTF FAIRCHILD0112+1540China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  14


BCW61AMTF Fairchild1000USA
Val Technologies, Inc 14


BCW61A-MTF FSC16+120000China
ShenZhen BoKe Elec Co.,Ltd1


BCW61A-E6327 INFINEON2015+50000China
Bonase Electronics (HK) Co., Limited  11


Icwindows Electronics HK Co.,Limited 11


AT88SC153-SU ATMEL09+4000Hong Kong
Hongkong Rixin International Trading Company  1


AT88SC153-SU 9000China
Hong Kong In Fortune Electronics Co., Limited  12


AT88SC153-SU 14+6000China
ShenZhen Haoyifeng Electronic Co.,Ltd 2


AT88SC153-SU ATMEL1327+10000China
ZuoDao Technology Limited 3


AT88SC153-SU ATMEL09+4020China
Yu Hong Technologies Limited 1

Buy: IRF4905S, BCW61AMTF, AT88SC153SU
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BCW61AMTF | AT88SC153SU | IRF462 | IRF463 | IRF4710 | IRF48 | IRF48N | IRF4905 | IRF4905PBF | IRF4905PBF/STRPBF | IRF4905STRLPBF
 [hkinbatch20170420] [HGCacheDateZOITOTZO] [HGReferer_STC_Overview] [HKINPDSTYLE]
IRF4905S Aug 25, 1997 HEXFET Power MOSFET. PD - 9.1478A l Advanced Process Technology l Surface Mount ( IRF4905S ) l Low-profile through-hole (IRF4905L). May 8, 2005 IRF4905S /L. 2 www.irf.com. Electrical Characteristics @ TJ = 25 C (unless otherwise specified). Parameter. Min. Typ. Max. Units. V(BR)DSS. Jun 11, 2003 Page 1. IRF4905PbF. HEXFET Power MOSFET. PD - 94816. Fifth Generation HEXFETs from International Rectifier utilize advanced Sep 15, 2011 IRF4905S . MOSFET, P-ch, -55V, -74A , 20milliOhms. D PAK. IRF4905S . IR. 4. Q2 , Q4, Q6, Q7. Si4840DY. MOSFET, N-ch, 40V, 14A, 9milliohm. Aug 25, 1997 (See Figure 12). t=60s, =60Hz. ISD -38A, di/dt -270A/ s, VDD V(BR) DSS,. TJ 175 C. Uses IRF4905 data and test conditions.

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