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【IRF530NS】【IR】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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IRF530N . HEXFET Power MOSFET. 3/16/01. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 2.15. R CS. Case-to-Sink, Flat, Greased Surface. 0.50. Oct 3, 2004 IRF530NS /LPbF. 2 www.irf.com. S. D. G parameter. Min. Typ. Max. Units. Conditions. IS. Continuous Source Current. MOSFET symbol. DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Where the gate to source charge for the IRF530NS is 5.5 nC and the typical gate drive current for the. TPS2490 of 22 A, the switchover time T equals:. Central Semiconductor CMZ5948B. D2. 0. Not installed, diode (SMA). N1. 1. 100V 17A N-channel MOSFET. (D^2 PAK). International Rectifier IRF530NS . R1. 1. HKinDataSheet_ZO1GOSIT
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IRF530NS

IRF530NS  IR TO-263 20000China
Belt (HK) Electronics Co E-Catalog 11th Year Member

IRF530NS

IRF530NS  IR 11+TO-263 593
In-Stock
China
Hongkong Intercell Electronics Co.,Limited E-Catalog 6th Year Member

IRF530NS

IRF530NS  IR 16+D2-pak 25000
In-Stock
Taiwan
Yingxinyuan INT'L (Group) Limited E-Catalog 14th Year Member

IRF530NS

IRF530NS  IR 16946
In-Stock
China
Nosin (HK) Electronics Co. E-Catalog 12th Year Member

IRF530NS

IRF530NS  IR 07+D2-pak 10000China
Far East Electronics Technology Limited E-Catalog 11th Year Member

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IRF530N . HEXFET Power MOSFET. 3/16/01. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 2.15. R CS. Case-to-Sink, Flat, Greased Surface. 0.50. Oct 3, 2004 IRF530NS /LPbF. 2 www.irf.com. S. D. G parameter. Min. Typ. Max. Units. Conditions. IS. Continuous Source Current. MOSFET symbol. DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Where the gate to source charge for the IRF530NS is 5.5 nC and the typical gate drive current for the. TPS2490 of 22 A, the switchover time T equals:. Central Semiconductor CMZ5948B. D2. 0. Not installed, diode (SMA). N1. 1. 100V 17A N-channel MOSFET. (D^2 PAK). International Rectifier IRF530NS . R1. 1. HKinDataSheet_ZO1GOSIT
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