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【IRF5804TRPBF Transistors - FETs, MOSFETs - Single IR】【12G14040106G】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IRF5804TRPBF

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET P-CH 40V 2.5A 6-TSOP

Series:

HEXFET

Packaging:

Digi-Reel

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

8.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

680pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

2W (Ta)

Rds On (Max) @ Id, Vgs:

198 mOhm @ 2.5A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

Micro6,TSOP-6)

Package / Case:

SOT-23-6 Thin, TSOT-23-6

Search For IRF5804TRPBF - IRF5804TRPBF Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
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IRF5804TRPBF

IRF5804TRPBF IR1208+57406China
Ande Electronics Co., Limited  12

IRF5804TRPBF

IRF5804TRPBF International Rectifier16201Hong Kong
HongKong Wanghua Technology Limited 4
STRC

IRF5804TRPBF

IRF5804TRPBF IR12000Hong Kong
C & I Semiconductors Co., Limited  8
STRC

IRF5804TRPBF

IRF5804TRPBF IR10354China
Sinno Electronics Co., Limited  8

IRF5804TRPBF

IRF5804TRPBF Infineon Technologies2016+1000China
MY Group (Asia) Limited  13

12G14040106G

12G14040106G FOXCONN2015+10000China
Bonase Electronics (HK) Co., Limited  12
Warranty

12G14040106G

12G14040106G FOXCONN300China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  15

12G14040106G

12G14040106G Foxconn300China
Hitech Semiconductor Co., Limited 1
Warranty

12G14040106N

12G14040106N FOXCONN300China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  15

12G14040106N

12G14040106N Foxconn300China
Hitech Semiconductor Co., Limited 1

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