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【IRF5852TRPBF】【IR】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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MOSFET 2N-CH 20V 2.7A 6-TSOP Series: HEXFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 2.7A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250米A Gate Charge (Qg) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) @ Vds: 400pF @ 15V Power - Max: 960mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP HKinDataSheet_ZO1GOSIT
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IRF5852TRPBF

IRF5852TRPBF  IR 2006SOT23-6 24608
In-Stock
China
Hongkong Intercell Electronics Co.,Limited E-Catalog 7th Year Member

IRF5852TRPBF

IRF5852TRPBF  IR 0725+BGA 887China
CHIPMALL ELECTRONICS LIMITED E-Catalog 3rd Year Member

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IRF5852TRPBF

IRF5852TRPBF  IR 2015+TSOP-6 15765China
Bonase Electronics (HK) Co., Limited E-Catalog 11th Year Member

IRF5852TRPBF

IRF5852TRPBF  IR 1539+ 14520
In-Stock
China
TY International components Limited E-Catalog 7th Year Member

IRF5852TRPBF

IRF5852TRPBF  IR 16+TSOP6L 30000Taiwan
Yingxinyuan INT'L (Group) Limited E-Catalog 14th Year Member

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MOSFET 2N-CH 20V 2.7A 6-TSOP Series: HEXFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 2.7A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250米A Gate Charge (Qg) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) @ Vds: 400pF @ 15V Power - Max: 960mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP HKinDataSheet_ZO1GOSIT
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