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【IRF6602 Transistors - FETs, MOSFETs - Single IOR】【1313015151827040】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IRF6602

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 20V 11A DIRECTFET

Series:

HEXFET

Packaging:

Cut Tape (CT)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

11A (Ta), 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

18nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

1420pF @ 10V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

2.3W (Ta), 42W (Tc)

Rds On (Max) @ Id, Vgs:

13 mOhm @ 11A, 10V

Operating Temperature:

-40°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DIRECTFET,MQ

Package / Case:

DirectFET,Isometric MQ

Search For IRF6602 - IRF6602 Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
Region
Company

IRF6602

IRF6602 IOR15+3969Hong Kong
Texas HK Limited  12

IRF6602

IRF6602 IOR3969China
H.T. Electronics Industrial Co., Limited  12

IRF6602

IRF6602 Infineon Technologies2016+1000China
MY Group (Asia) Limited  13

IRF6602

IRF6602 IR33600China
HK Xinyuhang Electronic Co.,Ltd 12

IRF6602TR1

IRF6602TR1 IR770China
Tianke Electronics (HK) Limited  12
Warranty

13130136

13130136 INTEL07+99China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  15

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1313015151827040 | IRF654B | IRF6601 | GRM1555C1H9R7WA01D | IRF6603TR | 08051A101JAT4A | AT25DF081MHNY | IRF6603TRPBF | MXD8680S | GRM1555C1HR80WA01D
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