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【IRF6603TR1】【Transistors - FETs, MOSFETs - Single】【IOR】【INFINEON TECHNOLOGIES】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IRF6603TR1

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 30V 27A DIRECTFET

Series:

HEXFET

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

27A (Ta), 92A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

72nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

6590pF @ 15V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

3.6W (Ta), 42W (Tc)

Rds On (Max) @ Id, Vgs:

3.4 mOhm @ 25A, 10V

Operating Temperature:

-40°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DIRECTFET,MT

Package / Case:

DirectFET,Isometric MT

Search For IRF6603TR1 - IRF6603TR1 Product Information : 

IRF6603TR1, IOR, DirectFET? Isometric MT, MOSFET N-CH 30V 27A DIRECTFET, Discrete Semiconductor Products, FETs - Single HKinDataSheet_ZO1GOSIT
1- 5 of 5 Record(s) PREV  Page  NEXT
Part Number Part Number Brand D/C Desc Qty Country /
Region
Company

IRF6603TR1

IRF6603TR1  IOR 0947+QFN 699China
Ande Electronics Co., Limited E-Catalog 12th Year Member

IRF6603TR1

IRF6603TR1  Infineon Techno... 2016+ 1000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IRF6603TR1

IRF6603TR1  IOR 09+SMD 165China
Hinson International Electron Limited E-Catalog 1st Year Member

IRF6603TR1

IRF6603TR1  17+ 28000China
CP MICRO-ELECTRON (HK) INDUSTRIAL CO., LIMITED E-Catalog 1st Year Member

IRF6604

IRF6604  IOR 05+na 22655China
HK TWO L ELECTRONIC LIMITED E-Catalog 6th Year Member

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