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【IRF6619TR1PBF】【Transistors - FETs, MOSFETs - Single】【IR】【INFINEON TECHNOLOGIES】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single


Infineon Technologies






Tape & Reel (TR)

FET Type:



MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):


Current - Continuous Drain (Id) @ 25°C:

30A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):


Vgs(th) (Max) @ Id:

2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

57nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

5040pF @ 10V

Vgs (Max):


FET Feature:


Power Dissipation (Max):

2.8W (Ta), 89W (Tc)

Rds On (Max) @ Id, Vgs:

2.2 mOhm @ 30A, 10V

Operating Temperature:

-40°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:


Package / Case:

DirectFET,Isometric MX

Search For IRF6619TR1PBF - IRF6619TR1PBF Product Information : 

Acoustic Components, Optoelectronic Components, Capacitors
1- 5 of 5 Record(s) PREV  Page  NEXT
Part Number Part Number Brand D/C Desc Qty Country /


IRF6619TR1PBF  IR 2015+DIRECTFET 390China
Bonase Electronics (HK) Co., Limited E-Catalog 12th Year Member


IRF6619TR1PBF  Infineon Techno... 2016+ 14000China
MY Group (Asia) Limited E-Catalog 13th Year Member


IRF6617  16+ 4000Taiwan
Yingxinyuan INT'L (Group) Limited E-Catalog 14th Year Member


IRF6610TR  IR 06+NA 2777China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd E-Catalog 15th Year Member


IRF6612TR1PBF  IR 0821+QFN 88China
C&G Electronics (HK) Co., Ltd E-Catalog 1st Year Member

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