【IRF6629TRPBF Transistors - FETs, MOSFETs - Single IR】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IRF6629TRPBF
Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Brand:

Infineon Technologies
Description:

MOSFET N-CH 25V 29A DIRECTFET
Series:

HEXFET
Packaging:

FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

25V
Current - Continuous Drain (Id) @ 25°C:

29A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):

-
Vgs(th) (Max) @ Id:

2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:

51nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:

4260pF @ 13V
Vgs (Max):

-
FET Feature:

-
Power Dissipation (Max):

2.8W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs:

2.1 mOhm @ 29A, 10V
Operating Temperature:

-40°C ~ 150°C (TJ)
Mounting Type:

Surface Mount
Supplier Device Package:

DIRECTFET,MX
Package / Case:

DirectFET,Isometric MX
1 - 5 of 5 Record(s)
IRF6629TRPBF
 Part NumberBrandD/CQtyCompany

IRF6629TRPBF

IR1104+830Ande Electronics Co., Limited    12

IRF6629TRPBF

IOR10500Hong Kong In Fortune Electronics Co., Limited    13

IRF6629TRPBF

Infineon Technologies1000MY Group (Asia) Limited    13
STRCWarranty

IRF6629TRPBF
 

INFINEON/IR14+/15+9600Sapu Electronics Corporation Limited   2

IRF6629TRPBF

IR5098Kunlida Electronics (HK) Limited    6

Related Part Number

IRF6621TRPBF | IRF6622TR1PBF | IRF6621TRPBF | IRF6622TR1PBF | IRF6622TRPBF | IRF6623 | IRF6623TR1PBF | IRF6623TRPBF | IRF6626TR1PBF | IRF6626TRPBF | IRF6628TR1PBF
IRF6629TRPBF Ref.:
[hkinbatch20180720]
[HGCacheDateZOIBIIIP]
[HGReferer_Escrow]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

IRF6629TRPBF Related Keywords in 2018 USA

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