【IRF6629TRPBF Transistors - FETs, MOSFETs - Single IR】Electronic Components In Stock Suppliers in 2019【Price】【Datasheet PDF】USA
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Part Number: |
IRF6629TRPBF |
Catagory: |
|
Brand: |
Infineon Technologies |
Description: |
MOSFET N-CH 25V 29A DIRECTFET |
Series: |
HEXFET |
Packaging: |
|
FET Type: |
N-Channel |
Technology: |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): |
25V |
Current - Continuous Drain (Id) @ 25°C: |
29A (Ta), 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): |
- |
Vgs(th) (Max) @ Id: |
2.35V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: |
51nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: |
4260pF @ 13V |
Vgs (Max): |
- |
FET Feature: |
- |
Power Dissipation (Max): |
2.8W (Ta), 100W (Tc) |
Rds On (Max) @ Id, Vgs: |
2.1 mOhm @ 29A, 10V |
Operating Temperature: |
-40°C ~ 150°C (TJ) |
Mounting Type: |
Surface Mount |
Supplier Device Package: |
DIRECTFET,MX |
Package / Case: |
DirectFET,Isometric MX |
|
| | Part Number | Brand | D/C | Qty | Company | |  | IRF6629TRPBF | IR | | 10430 | CIS Ltd (CHECK IC SOLUTION LIMITED) | | | 1 | | | IRF6629TRPBF | IR | | 2250 | OIC Electronics Hong Kong Company Limited | | | 5 | | | IRF6629TRPBF | | | 10500 | Hong Kong In Fortune Electronics Co., Limited | | | 13 | | | IRF6629TRPBF | Infineon Technologies | | 1000 | MY Group (Asia) Limited | | | 14 | | | IRF6629TRPBF | IR | 06+ | 4133 | 3A COMPONENTS LIMITED | | | 2 |
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IRF6629TRPBF Ref.:
[hkinbatch20181020]
[HGCacheDateZOIPOZIP]
[HGReferer_Escrow]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]
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