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【IRF7311TR】【IOR】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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MOSFET 2N-CH 20V 6.6A 8-SOIC Series: HEXFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 6.6A Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250米A Gate Charge (Qg) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) @ Vds: 900pF @ 15V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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Part Number Part Number Brand D/C Desc Qty Country /
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IRF7311TR

IRF7311TR  IOR 02+SOP8 24China
H.T. Electronics Industrial Co., Limited E-Catalog 12th Year Member

IRF7311TR

IRF7311TR  IOR 34000Hong Kong
HongKong Wanghua Technology Limited E-Catalog 3rd Year Member

IRF7311TR

IRF7311TR  IOR 0147+SOP-8P 1521
In-Stock
China
Hengguang (HK) Electronics Trading Limited E-Catalog 13th Year Member

IRF7311TR

IRF7311TR  0147+SOP-8P 1471China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 12th Year Member

IRF7311TR

IRF7311TR  IOR 02+SO-8 2876China
Hongkong Intercell Electronics Co.,Limited E-Catalog 6th Year Member

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MOSFET 2N-CH 20V 6.6A 8-SOIC Series: HEXFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 6.6A Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250米A Gate Charge (Qg) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) @ Vds: 900pF @ 15V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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