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【IRF7316TR】【IR】【IOR】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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MOSFET 2P-CH 30V 4.9A 8-SOIC Series: HEXFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 4.9A Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) @ Vds: 710pF @ 25V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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Part Number Part Number Brand D/C Desc Qty Country /
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Company

IRF7316TR

IRF7316TR  IR 1997 1034
In-Stock
Japan
Pacific Corporation E-Catalog 16th Year Member

IRF7316TR

IRF7316TR  IOR SOP8 121China
H.T. Electronics Industrial Co., Limited E-Catalog 12th Year Member

IRF7316TR

IRF7316TR  IR 06+/07+SOP-8 7467China
Far East Electronics Technology Limited E-Catalog 11th Year Member

IRF7316TR

IRF7316TR  IOR 04+SOP8 2652
In-Stock
China
Hongkong Intercell Electronics Co.,Limited E-Catalog 6th Year Member

IRF7316TR

IRF7316TR  IR SO8 341China
ShenZhen Weierda Electronics Co., Ltd. 2nd Year Member

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MOSFET 2P-CH 30V 4.9A 8-SOIC Series: HEXFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 4.9A Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) @ Vds: 710pF @ 25V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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