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【IRF7325PBF】【INFINEON TECHNOLOGIES】【INFINEON】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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MOSFET 2P-CH 12V 7.8A 8-SOIC Series: HEXFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25~C: 7.8A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250米A Gate Charge (Qg) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) @ Vds: 2020pF @ 10V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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IRF7325PBF

IRF7325PBF  Infineon Techno... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 12th Year Member

IRF7325PBF

IRF7325PBF  Infineon 12+IC 1000China
Dopoint Hi-Tech Limited E-Catalog 12th Year Member

IRF7324TRPBF

IRF7324TRPBF  IR 15+SOP-8 37560
In-Stock
China
Sinno Electronics Co., Limited E-Catalog 8th Year Member

IRF7322D1TR

IRF7322D1TR  IOR 0238+SOP-8 2421China
Kunlida Electronics (HK) Limited E-Catalog 5th Year Member

IRF7321

IRF7321  ir 200195/tube/so8 899China
ICK Internation (HK) Co., Limited E-Catalog 6th Year Member

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MOSFET 2P-CH 12V 7.8A 8-SOIC Series: HEXFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25~C: 7.8A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250米A Gate Charge (Qg) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) @ Vds: 2020pF @ 10V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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