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【IRF7325TR】【Transistors - FETs, MOSFETs - Arrays】【IR】【INFINEON TECHNOLOGIES】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IRF7325TR

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Brand:

Infineon Technologies

Description:

MOSFET 2P-CH 12V 7.8A 8-SOIC

Series:

HEXFET

Packaging:

Tape & Reel (TR)

FET Type:

2 P-Channel (Dual)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

12V

Current - Continuous Drain (Id) @ 25°C:

7.8A

Rds On (Max) @ Id, Vgs:

24 mOhm @ 7.8A, 4.5V

Vgs(th) (Max) @ Id:

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

33nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

2020pF @ 10V

Power - Max:

2W

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package:

8-SO

Search For IRF7325TR - IRF7325TR Product Information : 

MOSFET 2P-CH 12V 7.8A 8-SOIC Series: HEXFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25~C: 7.8A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250米A Gate Charge (Qg) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) @ Vds: 2020pF @ 10V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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Hot Offer 90 Days WarrantyNew and Original IRF7324TRPBF IR IRF7324TRPBF IR High 0:0.605
Hong Kong
OEMs Inventory 4th Year Member



Part Number Part Number Brand D/C Desc Qty Country /
Region
Company

IRF7325TR

IRF7325TR  2015+CONN 4606China
Bonase Electronics (HK) Co., Limited E-Catalog 12th Year Member

IRF7325TR

IRF7325TR  IR 17+SOP8 65000Hong Kong
C & I Semiconductors Co., Limited E-Catalog 8th Year Member

IRF7325TR

IRF7325TR  Infineon Techno... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IRF7325TR

IRF7325TR  IR 1550+SOP 98260China
Lattice International Trading Co., Limited E-Catalog 9th Year Member

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MOSFET 2P-CH 12V 7.8A 8-SOIC Series: HEXFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25~C: 7.8A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250米A Gate Charge (Qg) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) @ Vds: 2020pF @ 10V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
[HKINOLDPD] [HKIN20171020MDPartDetails]

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