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【IRF7343PBF IR】【BD13910STU】【MT47H64M16HR1831IT】HKinventory - Suppliers in 2017【Price】【Datasheet PDF】USA

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 Part NumberBrandD/CQtyCompany
MT47H64M16HR-3IT:HMICRON13+2000Kwong Shun Electronics (HK)Co.   12

IRF7343PBF, BD13910STU, MT47H64M16HR1831IT
 Part NumberBrandD/CQtyCompany
IRF7343PBF
 
IR141837Sinno Electronics Co., Limited    7
IRF7343PBF675CHIPMALLS ELECTRONICS LIMITED    2
IRF7343PBFInternation.Rectifer34675C-March Electronics Co.,Ltd   5
IRF7343PBF16+4000Yingxinyuan INT'L (Group) Limited    13
IRF7343PBFIR12+23Top Electronics Co.,    11
BD13910STU
 
FAIRCHILD1335+31Hongkong Intercell Electronics Co.,Limited    6
BD13910STU
 
FAIRCHILD1335+83KYNIX SEMICONDUCTOR HONG KONG LIMITED    3
BD13910STUFairchild Semiconductor2015+2185Hongkong Rixin International Trading Company   1
BD13910STUFAIRCHILD2875FantastIC Sourcing   12
BD139-16
 
ST1045United Sources Industrial Enterprises   16
MT47H64M16HR-1831ITMICRON00+105Jete (HK) Electronics Limited   2
MT47H64M8CF-25E-G
 
MICRON2011195Pacific Corporation   16
MT47H64M16HR-25E IT:HMICRON1000United Sources Industrial Enterprises   16
MT47H64M16HR-25E:HMICRON1500Hengguang (HK) Electronics Trading Limited   12

IRF7343PBF Description

MOSFET N/P-CH 55V 8-SOIC Series: HEXFET? FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25~C: 4.7A, 3.4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) @ Vds: 740pF @ 25V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO

Related Part Number

IRF7342QTRPBF | IRF7342TRPBF | IRF7343 | IRF7343TRPBF | IRF7350 | IRF7350PBF | IRF7351 | IRF7351PBF | IRF7371

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IRF7343PBF Ref.: [hkinbatch20161020] [HGCacheDateZOITOIIT] [HGReferer_Escrow]
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