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【IRF7779L2TR1PBF】【Transistors - FETs, MOSFETs - Single】【INFINEON TECHNOLOGIES】【IR】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IRF7779L2TR1PBF

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 150V 375A DIRECTFET

Series:

HEXFET

Packaging:

Digi-Reel

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

150V

Current - Continuous Drain (Id) @ 25°C:

375A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

150nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

6660pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

3.3W (Ta), 125W (Tc)

Rds On (Max) @ Id, Vgs:

11 mOhm @ 40A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DIRECTFET L8

Package / Case:

DirectFET,Isometric L8

Search For IRF7779L2TR1PBF - IRF7779L2TR1PBF Product Information : 

Printed Circuit Boards, Electronic Component Parts, Electronic Components Industry Services
1- 5 of 5 Record(s) PREV  Page  NEXT
Part Number Part Number Brand D/C Desc Qty Country /
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Company

IRF7779L2TR1PBF

IRF7779L2TR1PBF  Infineon Techno... 2016+ 1000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IRF7779L2TRPBF

IRF7779L2TRPBF  IR DIRECTFET 9050China
Top Electronics Co., E-Catalog 12th Year Member

IRF7779

IRF7779  BELFUSE 188USA
Chip 1 Exchange USA, Inc. E-Catalog 1st Year Member

IRF7779L2TRPBF

IRF7779L2TRPBF  IR 12+DIRECTFET 6558China
HK TWO L ELECTRONIC LIMITED E-Catalog 6th Year Member

IRF7779L2TRPBF

IRF7779L2TRPBF  Infineon Techno... 2016+ 15000China
MY Group (Asia) Limited E-Catalog 13th Year Member

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