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Shenzhen Chuangxinda Electronic-Tech Co.,Ltd , Sinno Electronics Co., Limited , Hong Kong In Fortune Electronics Co., Limited  ...
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IRF8513PBF IRF8513PBF  IR 0932+SOIC-8 694China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd E-Catalog 14th Year Member

IRF8513PBF IRF8513PBF  IR 0932+SOIC-8 1388
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Sinno Electronics Co., Limited E-Catalog 7th Year Member

IRF8513PBF IRF8513PBF  SOP8 3989China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 11th Year Member

IRF8513PBF IRF8513PBF  Internation.Rec... 1140China
C-March Electronics Co.,Ltd E-Catalog 5th Year Member

IRF8513PBF IRF8513PBF  IR 0932+SOIC-8 694Hong Kong
Hongkong Hunjet Electronic Components Limited E-Catalog 10th Year Member

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7MBP150RUC060 | C30619GH | FD602AH60 | KSZ8721L | MCP1824STADJE/DB | PIC18F45K80IPT | QF132V330S | QMV453AT5 | SFH4721 | UC3842D/AD/BD [hkinbatch020] [hkingendate20170125] [hkingenidC132770][hkinOfferInventC]
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MOSFET 2N-CH 30V 8A/11A 8-SOIC Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 8A, 11A Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25米A Gate Charge (Qg) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) @ Vds: 766pF @ 15V Power - Max: 1.5W, 2.4W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT

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