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【IRF9389PBF】【IR】【INFINEON TECHNOLOGIES】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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MOSFET N/P-CH 30V 6.8A/4.6A 8-SO Series: HEXFET? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 6.8A, 4.6A Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id: 2.3V @ 10米A Gate Charge (Qg) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) @ Vds: 398pF @ 15V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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IRF9389PBF

IRF9389PBF  IR 12000香港
SUNTOP SEMICONDUCTOR CO., LIMITED 產品展覽廳 第 3 年會員

IRF9389PBF

IRF9389PBF  Infineon Techno... 2016+ 8000中國
MY Group (Asia) Limited 產品展覽廳 第 12 年會員

IRF9389PBF

IRF9389PBF  IR 15000中國
Shenzhen HDX Electronic Co.,Limited. 第 1 年會員

IRF9383MTR1PBF

IRF9383MTR1PBF  Infineon Techno... 2016+ 1000中國
MY Group (Asia) Limited 產品展覽廳 第 12 年會員

IRF9388TRPBF

IRF9388TRPBF  INFINEON/IR 17+4000/Reel 20000台灣
Corich International Ltd. 產品展覽廳 第 13 年會員

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MOSFET N/P-CH 30V 6.8A/4.6A 8-SO Series: HEXFET? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 6.8A, 4.6A Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id: 2.3V @ 10米A Gate Charge (Qg) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) @ Vds: 398pF @ 15V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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