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【IRF9389PBF】【INFINEON TECHNOLOGIES】【IR】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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MY Group (Asia) Limited , ONSTAR ELECTRONICS CO., LIMITED , Shenzhen JTC technology co., ltd.  ...
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Part Number Part Number Brand D/C Desc Qty Country /
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IRF9389PBF

IRF9389PBF  Infineon Techno... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 12th Year Member

IRF9389PBF

IRF9389PBF  IR 500Hong Kong
ONSTAR ELECTRONICS CO., LIMITED E-Catalog 1st Year Member

IRF9389PBF

IRF9389PBF  IR 16+ 58000China
Shenzhen JTC technology co., ltd. E-Catalog 1st Year Member

IRF9389PBF

IRF9389PBF  Infineon Techno... 2015+8-SO 21Hong Kong
HUA ELECTRONIC SEMICONDUCTOR (HONGKONG) CO., LIMITED 1st Year Member

IRF9388TRPBF

IRF9388TRPBF  IR 2016+SOP-8 850000
In-Stock
China
Far East Electronics Technology Limited E-Catalog 11th Year Member

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5TR200010N

74HCU00

CL21B225KAFNNNE

ERJT06J330V

KLS2125A35006P

PTSY0101R100Y

SUD35N0526L

TC9312AN082

TSA5060AT/C1

TW2868LA1CR

XCS20XL4VQG100
[hkinbatch021] [hkingendate20170504] [hkingenidC420369][hkinOfferInventC]
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MOSFET N/P-CH 30V 6.8A/4.6A 8-SO Series: HEXFET? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 6.8A, 4.6A Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id: 2.3V @ 10米A Gate Charge (Qg) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) @ Vds: 398pF @ 15V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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