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【IRF9389PBF】【Transistors - FETs, MOSFETs - Arrays】【INFINEON TECHNOLOGIES】【IR】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IRF9389PBF

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Brand:

Infineon Technologies

Description:

MOSFET N/P-CH 30V 6.8A/4.6A 8-SO

Series:

HEXFET

Packaging:

Tube

FET Type:

N and P-Channel

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

6.8A, 4.6A

Rds On (Max) @ Id, Vgs:

27 mOhm @ 6.8A, 10V

Vgs(th) (Max) @ Id:

2.3V @ 10µA

Gate Charge (Qg) (Max) @ Vgs:

14nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

398pF @ 15V

Power - Max:

2W

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package:

8-SO

Search For IRF9389PBF - IRF9389PBF Product Information : 

MOSFET N/P-CH 30V 6.8A/4.6A 8-SO Series: HEXFET? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 6.8A, 4.6A Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id: 2.3V @ 10米A Gate Charge (Qg) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) @ Vds: 398pF @ 15V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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Part Number Part Number Brand D/C Desc Qty Country /
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Company

IRF9389PBF

IRF9389PBF  Infineon Techno... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IRF9389PBF

IRF9389PBF  IR SOP-8 15000China
Shenzhen HDX Electronic Co.,Limited. 1st Year Member

IRF9389TR

IRF9389TR  16200Hong Kong
United Sources Industrial Enterprises Limited E-Catalog 17th Year Member

IRF9388TRPBF

IRF9388TRPBF  Infineon MOSFET P-CHANNE... 4087Taiwan
Corich International Ltd. E-Catalog 13th Year Member

IRF9383MTR1PBF

IRF9383MTR1PBF  Infineon Techno... 2016+ 1000China
MY Group (Asia) Limited E-Catalog 13th Year Member

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MOSFET N/P-CH 30V 6.8A/4.6A 8-SO Series: HEXFET? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 6.8A, 4.6A Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id: 2.3V @ 10米A Gate Charge (Qg) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) @ Vds: 398pF @ 15V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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