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【IRF9530NSTRRPBF】【Transistors - FETs, MOSFETs - Single】【IR】【INFINEON TECHNOLOGIES】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IRF9530NSTRRPBF

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET P-CH 100V 14A D2PAK

Series:

HEXFET

Packaging:

Tape & Reel (TR)

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

58nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

760pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

3.8W (Ta), 79W (Tc)

Rds On (Max) @ Id, Vgs:

200 mOhm @ 8.4A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

D2PAK

Package / Case:

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Search For IRF9530NSTRRPBF - IRF9530NSTRRPBF Product Information : 

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Part Number Part Number Brand D/C Desc Qty Country /
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IRF9530NSTRRPBF

IRF9530NSTRRPBF  IR 17+TO-263 20900China
Ande Electronics Co., Limited E-Catalog 12th Year Member

IRF9530NSTRRPBF

IRF9530NSTRRPBF  Infineon Techno... 2016+ 1000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IRF9530NSTRRPBF

IRF9530NSTRRPBF  IR TO-263 800China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 12th Year Member

IRF9530NSTRRPBF

IRF9530NSTRRPBF  IR 2015+TO-263 15600China
Bonase Electronics (HK) Co., Limited E-Catalog 12th Year Member

IRF9530NSTRRPBF

IRF9530NSTRRPBF  IR 15+TO-263 392China
Sino Star Electronics (HK) Co.,Limited E-Catalog 11th Year Member

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1%2F20SP | 12065G474MAT2A | 15102600 | 16228381 | 37412000430 | 4440700%2F10 | 5KP110C | 85103C2 | 88E1149RXXTAH1C000 | 9988900
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