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【IRF9540N/】【IR】【FAIRCHILD】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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DATASHEET May 13, 1998 IRF9540N . HEXFET Power MOSFET. PD - 91437B. Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ -10V. -23. Mar 11, 2003 Uses IRF9540N data and test conditions. Source-Drain Ratings and Characteristics. Parameter. Min. Typ. Max. Units. Conditions. V(BR)DSS. Mar 16, 1998 Uses IRF9540N data and test conditions. Pulse width 300 s; duty cycle 2%. Source-Drain Ratings and Characteristics. A. -15. -76. S. HKinDataSheet_ZO1GOSIT
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Part Number Part Number Brand D/C Desc Qty Country /
Region
Company

IRF9540NPBF

IRF9540NPBF  IR 17 32100
In-Stock
Hong Kong
United Sources Industrial Enterprises Limited E-Catalog 17th Year Member

IRF9540

IRF9540  IR 1991 680
In-Stock
Japan
Pacific Corporation E-Catalog 17th Year Member

IRF9540

IRF9540  Fairchild 1000USA
Val Technologies, Inc E-Catalog 15th Year Member

IRF9540NPBF

IRF9540NPBF  IR 1545+TO220 40China
C&G Electronics (HK) Co., Ltd E-Catalog 1st Year Member

IRF9540N

IRF9540N  isc, iscsemi 2018+TO-220 10KChina
Inchange Semiconductor Company Limited E-Catalog 2nd Year Member

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DATASHEET May 13, 1998 IRF9540N . HEXFET Power MOSFET. PD - 91437B. Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ -10V. -23. Mar 11, 2003 Uses IRF9540N data and test conditions. Source-Drain Ratings and Characteristics. Parameter. Min. Typ. Max. Units. Conditions. V(BR)DSS. Mar 16, 1998 Uses IRF9540N data and test conditions. Pulse width 300 s; duty cycle 2%. Source-Drain Ratings and Characteristics. A. -15. -76. S. HKinDataSheet_ZO1GOSIT
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