Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET P-CH 200V 6.5A D2PAK
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25Â°C:
Drive Voltage (Max Rds On, Min Rds On):
Vgs(th) (Max) @ Id:
4V @ 250ÂµA
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
700pF @ 25V
Power Dissipation (Max):
3W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs:
800 mOhm @ 3.9A, 10V
-55Â°C ~ 150Â°C (TJ)
Supplier Device Package:
Package / Case:
TO-263-3, DÂ²ÂPak (2 Leads + Tab), TO-263AB
Search For IRF9630S - IRF9630S Product Information :
IRF9630S IRF9630S , SiHF9630S www.vishay.com. Vishay Siliconix. S16-0754-Rev. D, 02- May-16. 1. Document Number: 91085. For technical questions, contact: Sep 15, 2008 Power MOSFET. IRF9630S , SiHF9630S. Vishay Siliconix. FEATURES. Halogen -free According to IEC 61249-2-21. Definition. Surface Mount. IRF9630 , SiHF9630. Vishay Siliconix. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; DESCRIPTION. The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low ...
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