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IRF9Z34N Aug 25, 1997 D. G. -14. -68. ISD -10A, di/dt -290A/ s, VDD V(BR)DSS,. TJ 175 C. Uses IRF9Z34N data and test conditions. t=60s, =60Hz May 2, 2004 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per MILPITAS, CA 16 janvier 2012 - Linear Technology Corporation pr sente le LT4363, un contr leur de protection contre les surtensions qui offre une protection The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a. Aug 25, 1997 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per ...
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