【IRFB3256PBF Transistors - FETs, MOSFETs - Single Infineon Technologies】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IRFB3256PBF

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N CH 60V 75A TO-220AB

Series:

HEXFET

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Vgs(th) (Max) @ Id:

4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:

195nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

6600pF @ 48V

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

300W (Tc)

Rds On (Max) @ Id, Vgs:

3.4 mOhm @ 75A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

1 - 5 of 5 Record(s)
IRFB3256PBF
 Part NumberBrandD/CQtyCompany

IRFB3256PBF

Infineon Technologies14000MY Group (Asia) Limited    13

IRFB3256PBF

International Rectifier16262HongKong Wanghua Technology Limited   4

IRFB3256PBF

INFINEON30300MASSTOCK ELECTRONICS LIMITED    1

IRFB3256PBF

INFINEON17+60000Yasun Group Electronics Co.,Limited  5

IRFB3256PBF

ir18+62000APEX ELECTRONICS CO., LIMITED   4

Related Part Number

IRFB3306GPBF | IRFB3306PBF | IRFB3206GPBF | IRFB3206PBF | IRFB3207PBF | IRFB3207ZGPBF | IRFB3207ZPBF | IRFB3306GPBF | IRFB3306PBF | IRFB3307 | IRFB3307PBF
IRFB3256PBF Ref.:
[hkinbatch20180720]
[HGCacheDateZOIBOPZE]
[HGReferer_SD_Overview]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

IRFB3256PBF Related Keywords in 2018 USA

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