【IRFH5110TRPBF Transistors - FETs, MOSFETs - Single IR】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IRFH5110TRPBF

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 100V 11A 8-PQFN

Series:

HEXFET

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

11A (Ta), 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:

72nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

3152pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

3.6W (Ta), 114W (Tc)

Rds On (Max) @ Id, Vgs:

12.4 mOhm @ 37A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PQFN (5x6)

Package / Case:

8-PowerVDFN

IRFH5110TRPBF Description

IRFH5110TRPBF, IR, 8-PowerVQFN, MOSFET N-CH 100V 11A 8-PQFN, Discrete Semiconductor Products, FETs - Single
1 - 5 of 5 Record(s)
IRFH5110TRPBF
 Part NumberBrandD/CQtyCompany
STRCWarrantyNewAndOriginal

IRFH5110TRPBF
 

IR14+/13+75JFJ Electronics Co.,Limited    14

IRFH5110TRPBF

IR2015+100Bonase Electronics (HK) Co., Limited    13

IRFH5110TRPBF

IR55322OCEANIA INTERNATIONAL INDUSTRIAL LIMITED    11

IRFH5110TRPBF

Infineon Technologies1000MY Group (Asia) Limited    13

IRFH5110TRPBF

INFINEON4000Corich International Ltd.   14

Related Part Number

IRFH5204TR2PBF | IRFH5204TRPBF | IRFH5106TR2PBF | IRFH5106TRPBF | IRFH5110TR2PBF | IRFH5204TR2PBF | IRFH5204TRPBF | IRFH5206TR2PBF | IRFH5206TRPBF | IRFH5207TR2PBF | IRFH5207TRPBF
IRFH5110TRPBF Ref.:
[hkinbatch20180720]
[HGCacheDateZOIBIZIS]
[HGReferer_SD_Ecatalog]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

IRFH5110TRPBF Related Keywords in 2018 USA

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