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【IRFH5220TR2PBF】【Transistors - FETs, MOSFETs - Single】【IR】【INFINEON TECHNOLOGIES】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IRFH5220TR2PBF

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 200V 3.8A PQFN

Series:

HEXFET

Packaging:

Digi-Reel

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200V

Current - Continuous Drain (Id) @ 25°C:

3.8A (Ta), 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:

30nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1380pF @ 50V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

3.6W (Ta), 8.3W (Tc)

Rds On (Max) @ Id, Vgs:

99.9 mOhm @ 5.8A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PQFN (5x6)

Package / Case:

8-VQFN Exposed Pad

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Part Number Part Number Brand D/C Desc Qty Country /
Region
Company

IRFH5220TR2PBF

IRFH5220TR2PBF  IR 2015+ 2933China
Bonase Electronics (HK) Co., Limited E-Catalog 12th Year Member

IRFH5220TR2PBF

IRFH5220TR2PBF  Infineon Techno... 2016+ 1000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IRFH5220TR2PBF

IRFH5220TR2PBF  ir 16+ORIGINAL PACKAG... 62000China
APEX ELECTRONICS CO., LIMITED E-Catalog 3rd Year Member

IRFH5255TRPBF

IRFH5255TRPBF  IR QFN 1269China
Shenzhen Zhengrun Electronics Co.,Ltd E-Catalog 14th Year Member

IRFH5210TR2PBF

IRFH5210TR2PBF  IR 11+PQFN 144China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd E-Catalog 15th Year Member

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08055C681JAZ2A | 717616165 | 825039 | B72510V0200K062 | CacheInclude_RelatedParts.asp | CRCW12062001FRT1 | DDX206013TR%2FDDX2060 | GBU60050SG | HMC414MS8G | HMC610LP4ETR
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