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【IRFH8202TRPBF Transistors - FETs, MOSFETs - Single IR】【151RC80】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IRFH8202TRPBF

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 25V 100A PQFN

Series:

HEXFET, StrongIRFET

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

25V

Current - Continuous Drain (Id) @ 25°C:

47A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Vgs(th) (Max) @ Id:

2.35V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:

110nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

7174pF @ 13V

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

3.6W (Ta), 160W (Tc)

Rds On (Max) @ Id, Vgs:

1.05 mOhm @ 50A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

8-PQFN (5x6)

Package / Case:

8-PowerTDFN

Search For IRFH8202TRPBF - IRFH8202TRPBF Product Information : 

IRFH8202TRPBF Datasheet Aug 1, 2013 IRFH8202TRPbF . Base part number. Package Type. Standard Pack. Orderable part number. Absolute Maximum Ratings. Parameter. Units. ...
1 - 6 of 6 Record(s) PREV Page NEXT
Part NumberPart Number BrandD/CQtyCountry /
Region
Company

IRFH8202TRPBF

IRFH8202TRPBF IR13+1535China
Ande Electronics Co., Limited  12

IRFH8202TRPBF

IRFH8202TRPBF International Rectifier16840Hong Kong
HongKong Wanghua Technology Limited 4

IRFH8202TRPBF

IRFH8202TRPBF IR2015+2140China
Bonase Electronics (HK) Co., Limited  12

IRFH8202TRPBF

IRFH8202TRPBF Infineon129Taiwan
Corich International Ltd. 14

IRFH8202TRPBF

IRFH8202TRPBF INFINEON129Taiwan
E-Power Market Co.,Ltd 10
WarrantyNewAndOriginal

151RC80

151RC80 12China
CHIPMALL ELECTRONICS LIMITED  3

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151RC80 | 08055A332GAT2A | LTC3025IDCPBF | IRFH7936TRPBF | H5DU2562GTRE3J | 08055A332JAT2A | AT29C04015DI | 08055A360JAT2A | H5DU2562GTRJ3I | H5DU2562GTRJ3IR
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