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【IRFHM830DTR2PBF】【Transistors - FETs, MOSFETs - Single】【INFINEON TECHNOLOGIES】【IR】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IRFHM830DTR2PBF

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 30V 20A PQFN

Series:

HEXFET

Packaging:

Digi-Reel

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

20A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:

27nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1797pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

2.8W (Ta), 37W (Tc)

Rds On (Max) @ Id, Vgs:

4.3 mOhm @ 20A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PQFN (3x3)

Package / Case:

8-VQFN Exposed Pad

Search For IRFHM830DTR2PBF - IRFHM830DTR2PBF Product Information : 

Acoustic Components, Optoelectronic Components, Capacitors
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Part Number Part Number Brand D/C Desc Qty Country /
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Company

IRFHM830DTR2PBF

IRFHM830DTR2PBF  100China
CHIPMALL ELECTRONICS LIMITED E-Catalog 3rd Year Member

Buy Online

IRFHM830DTR2PBF

IRFHM830DTR2PBF  Infineon Techno... 2016+ 1000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IRFHM830DTR2PBF

IRFHM830DTR2PBF  ir 2010400/tr/smd 800China
ICK Internation (HK) Co., Limited E-Catalog 6th Year Member

IRFHM830DTR2PBF

IRFHM830DTR2PBF  INFINEON 17+MOSFET 60000China
Yasun Group Electronics Co.,Limited E-Catalog 5th Year Member

IRFHM830DTR2PBF

IRFHM830DTR2PBF  ir 16+ORIGINAL PACKAG... 62000China
APEX ELECTRONICS CO., LIMITED E-Catalog 3rd Year Member

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0603COG100NF | 1C326000AB0A | 24C01C | 25PE20VP | 29P400TC90PFTN | 55349983 | A1SJ71QC24N | AR1411HSSC12SHAA0DP | AX2SMK01 | BX80646I74790
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