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【IRFHM9331TR2PBF】【Transistors - FETs, MOSFETs - Single】【INFINEON TECHNOLOGIES】【INFINEON/IR】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IRFHM9331TR2PBF

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET P-CH 30V 11A 3X3 PQFN

Series:

HEXFET

Packaging:

Digi-Reel

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

11A (Ta), 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

2.4V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:

48nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1543pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

2.8W (Ta)

Rds On (Max) @ Id, Vgs:

10 mOhm @ 11A, 20V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PQFN (3x3)

Package / Case:

8-PowerTDFN

Search For IRFHM9331TR2PBF - IRFHM9331TR2PBF Product Information : 

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Part Number Part Number Brand D/C Desc Qty Country /
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IRFHM9331TR2PBF

IRFHM9331TR2PBF  Infineon Techno... 2016+ 1000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IRFHM9331TRPBF

IRFHM9331TRPBF  INFINEON/IR 17+4000/Reel 8000Taiwan
Corich International Ltd. E-Catalog 13th Year Member

IRFHM9331TRPBF

IRFHM9331TRPBF  IR 14+QFN33 6558China
HK TWO L ELECTRONIC LIMITED E-Catalog 6th Year Member

IRFHM9331TRPBF

IRFHM9331TRPBF  IR 13+QFN 18China
C&G Electronics (HK) Co., Ltd E-Catalog 1st Year Member

IRFHM9331TRPBF

IRFHM9331TRPBF  IR DFN 8077China
Shenzhen Zhengrun Electronics Co.,Ltd E-Catalog 14th Year Member

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