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【IRFHS9351TRPBF】【INTERNATIONAL RECTIFIER】【INFINEON】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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MOSFET 2P-CH 30V 2.3A PQFN Series: HEXFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 2.3A Rds On (Max) @ Id, Vgs: 170 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 10米A Gate Charge (Qg) @ Vgs: 3.7nC @ 10V Input Capacitance (Ciss) @ Vds: 160pF @ 25V Power - Max: 1.4W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-VQFN Supplier Device Package: 6-PQFN (2x2) HKinDataSheet_ZO1GOSIT
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IRFHS9351TRPBF

IRFHS9351TRPBF  International R... 15030Hong Kong
HongKong Wanghua Technology Limited E-Catalog 3rd Year Member

IRFHS9351TRPBF

IRFHS9351TRPBF  INFINEON 1520+QFN 3200China
Yangcheng Electronics Int'l Limited E-Catalog 12th Year Member

IRFHS9351TRPBF

IRFHS9351TRPBF  IR 11+QFN6 33878China
Top Electronics Co., E-Catalog 12th Year Member

IRFHS9351TRPBF

IRFHS9351TRPBF  Infineon Techno... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 12th Year Member

IRFHS9351TRPBF

IRFHS9351TRPBF  IR 11+QFN6 23565China
HK TWO L ELECTRONIC LIMITED E-Catalog 6th Year Member

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MOSFET 2P-CH 30V 2.3A PQFN Series: HEXFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 2.3A Rds On (Max) @ Id, Vgs: 170 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 10米A Gate Charge (Qg) @ Vgs: 3.7nC @ 10V Input Capacitance (Ciss) @ Vds: 160pF @ 25V Power - Max: 1.4W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-VQFN Supplier Device Package: 6-PQFN (2x2) HKinDataSheet_ZO1GOSIT
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