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Sinno Electronics Co., Limited , HongKong Wanghua Technology Limited , EM Electronic International Limited  ...
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Part Number Part Number Brand D/C Desc Qty Country /
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IRFHS9351TRPBF IRFHS9351TRPBF  IR QFN 24988China
Sinno Electronics Co., Limited E-Catalog 7th Year Member

IRFHS9351TRPBF IRFHS9351TRPBF  International R... 15030Hong Kong
HongKong Wanghua Technology Limited E-Catalog 2nd Year Member

IRFHS9351TRPBF IRFHS9351TRPBF  IR 11+QFN6 32828China
EM Electronic International Limited E-Catalog 11th Year Member

IRFHS9351TRPBF IRFHS9351TRPBF  IR 11+QFN6 23565China
HK TWO L ELECTRONIC LIMITED E-Catalog 5th Year Member

IRFHS9351TRPBF IRFHS9351TRPBF  INFINEON 1520+QFN 2405China
Yu Hong Technologies Limited E-Catalog 1st Year Member

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MOSFET 2P-CH 30V 2.3A PQFN Series: HEXFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 2.3A Rds On (Max) @ Id, Vgs: 170 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 10米A Gate Charge (Qg) @ Vgs: 3.7nC @ 10V Input Capacitance (Ciss) @ Vds: 160pF @ 25V Power - Max: 1.4W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-VQFN Supplier Device Package: 6-PQFN (2x2) HKinDataSheet_ZO1GOSIT

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