【IRFI510G Transistors - FETs, MOSFETs - Single TOSHIBA】【15FMCJ27W】【MS3106B2811P】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IRFI510G

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 100V 4.5A TO220FP

Series:

-

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

8.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

180pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

27W (Tc)

Rds On (Max) @ Id, Vgs:

540 mOhm @ 2.7A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220-3

Package / Case:

TO-220-3 Full Pack, Isolated Tab

1 - 11 of 11 Record(s)
IRFI510G, 15FMCJ27W, MS3106B2811P
 Part NumberBrandD/CQtyCompany

IRFI510G

TOSHIBA10+5122Worldsequence Co.,Ltd    9

IRFI510G

Vishay Siliconix2016+1000MY Group (Asia) Limited    13

IRFI510G

IR11+100000Chongway Electronics Tech Limited  3

IRFI510G

IR09+5200Topia Technology Co.,Limited   2

IRFI510GPBF

Vishay Siliconix2016+14000MY Group (Asia) Limited    13
Warranty

1.5FMCJ33A-T

3725Chip 1 Exchange USA, Inc.    1

D/MS3106B28-11P

DDK100Wintec Mfg. (Japan) Corporation  13

D/MS3106B28-11P

34Lungke Electronics Technology Co., Limited    7

MS3106A14S-2S

AMPHENOL19Ramos S.R.L.   13

MS3106E-18

20MICRORAM ELECTRONICS INC.   1

MS3106A-10SC-45

AMPHENOL95133DF Sales Co   1

Related Part Number

15FMCJ27W | MS3106B2811P | IRFI4212H | IRFI4227 | IRFI4227PBF | IRFI4229 | IRFI4229107PBF | IRFI4321 | IRFI460 | IRFI48G | IRFI520
IRFI510G Ref.:
[hkinbatch20171020]
[HGCacheDateZOIBOZZI]
[HGReferer_SiteMap]
[HKIN20171020GESTYLE]
[HKIN20171020MDPartDetails]

IRFI510G Related Keywords in 2018 USA

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