【IRFI640G Transistors - FETs, MOSFETs - Single IR】【XC6202P482PRN】【CTD116GK12B】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:



Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single


Vishay Siliconix







FET Type:



MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):


Current - Continuous Drain (Id) @ 25°C:

9.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):


Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

70nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1300pF @ 25V

Vgs (Max):


FET Feature:


Power Dissipation (Max):

40W (Tc)

Rds On (Max) @ Id, Vgs:

180 mOhm @ 5.9A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:


Package / Case:

TO-220-3 Full Pack, Isolated Tab

IRFI640G Description

www.vishay.com. S09-0013-Rev. A, 19-Jan-09. 1. Power MOSFET. IRFI640G , SiHFI640G. Vishay Siliconix. FEATURES. Isolated Package. High Voltage DESCRIPTION. The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the 0.54. 4.5. 8.3. 27. IRLI640G. 200. 10. 0.18 0.27 t. 9.9. 66. 40. IRFI640G . 200. 20. 0.18. 9.8. 70. 40. IRLI630G. 200. 10. 0.4. 0.5 t. 6.2. 40. 35. IRFI630G. 200. 20. 0.4. Jul 21, 2017 FEATURES. Low profile package. Ideal for automated placement. Glass passivated pellet chip junction. Low forward voltage drop. Aug 10, 2004 Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 18. ID @ TC = 100 C. Continuous Drain Current, VGS @ 10V.
1 - 5 of 5 Record(s)
 Part NumberBrandD/CQtyCompany




VISH/IR2014+5000G Trader Limited   7


IR16+22000C & I Semiconductors Co., Limited    8


3380Hong Kong In Fortune Electronics Co., Limited    12


IR10+347Sentai Trading Limited    5

Related Part Number

XC6202P482PRN | CTD116GK12B | IRFI520NPBF | IRFI5306 | IRFI530A | IRFI540 | IRFI614 | IRFI624GPBF | IRFI630 | IRFI640A | IRFI640GPBF
IRFI640G Ref.:

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