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【IRFP27N60K Vishay Semiconductors】【15FMCJ30AT】【SIM3C146BGQ】Electronic Components In Stock Suppliers in 2017【Price】【Datasheet PDF】USA

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IRFP27N60K SiHFP27N60K-E3. SnPb. IRFP27N60K . SiHFP27N60K. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. IRFP27N60K . 09/27/05 www.irf.com. 1. PD - 94407B. SMPS MOSFET. HEXFET Power MOSFET. Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain IRFP27N60K power switch. Figure 21 - IR1150S Gate Drive voltage. Figure 22 - IR1150S Gate Drive voltage. The rise time must be carefully controlled by virtue. Page 1. IR2103(S)PBF. 1 www.irf.com 2013 International Rectifier. April 18, 2013. Half-Bridge Driver. Features. . Floating channel designed for bootstrap Jul 6, 2005 requirements e.g. the larger IRAC1150-300W Demo Board employs an. IRFP27N60K power switch. The turn-on resistance is 8.9 and the ...
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Part NumberPart Number BrandD/CQtyCountry /


IRFP27N60K Vishay Semiconductors16063Hong Kong
HongKong Wanghua Technology Limited 3


IRFP27N60K IR2016+1Hong Kong
Hongkong Rixin International Trading Company  1


IRFP27N60K VISHAY11+100China


IRFP27N60K IR5814Hong Kong
E-Core Electronics Co. 8


IRFP27N60K IR30China
Acon Electronics Limited  11


1.5FMCJ100-W Rectron11662Hong Kong
HongKong Wanghua Technology Limited 3


SIM3C146-B-GQ Silicon Labs13101Hong Kong
HongKong Wanghua Technology Limited 3


SIM3C134-B-GMR Silicon Labs16+5000China
Riking Technology (HK) Co., Limited  8


SIM3C167-B-GM Silicon12+255China
Top Electronics Co.,  12


SIM3C167-B-GQR Silicon14+360China
Sinno Electronics Co., Limited  8


SIM3C167-B-GQR Silicon14+360China
Briew Technology (HK) Limited  3

Buy: IRFP27N60K, 15FMCJ30AT, SIM3C146BGQ
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15FMCJ30AT | SIM3C146BGQ | IRFP264N | IRFP264PBF | IRFP26N60 | IRFP26N60L | IRFP2710 | IRFP27N60 | IRFP27N60KPBF | IRFP2807 | IRFP2907

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