Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 400V 11A TO-247AC
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25Â°C:
Drive Voltage (Max Rds On, Min Rds On):
Vgs(th) (Max) @ Id:
4V @ 250ÂµA
Gate Charge (Qg) (Max) @ Vgs:
62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1400pF @ 25V
Power Dissipation (Max):
Rds On (Max) @ Id, Vgs:
550 mOhm @ 6.6A, 10V
-55Â°C ~ 150Â°C (TJ)
Supplier Device Package:
Package / Case:
Search For IRFP340 - IRFP340 Product Information :
IRFP340 DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Jan 24, 2001 VGS. Gate-to-Source Voltage. 20. V. EAS. Single Pulse Avalanche Energy . 5.7. mJ. IAR. Avalanche Current . 10. A. EAR. Repetitive Rth(JC). PD (W). @ TC = 25. C. IRFP350PBF. 400. 400. 16. 10. 100. 53.3. 0.65. 190. IRFP340 . 400. 550. 11. 6.9. 41.3. 20. 0.83. 150. IRFP340PBF. 400. 550. 11. ...
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