【IRFP4668PBF Transistors - FETs, MOSFETs - Single IR】Electronic Components In Stock Suppliers in 2019【Price】【Datasheet PDF】USA

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Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single


Infineon Technologies


MOSFET N-CH 200V 130A TO-247AC





FET Type:



MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):


Current - Continuous Drain (Id) @ 25°C:

130A (Tc)

Drive Voltage (Max Rds On, Min Rds On):


Vgs(th) (Max) @ Id:

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

241nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

10720pF @ 50V

Vgs (Max):


FET Feature:


Power Dissipation (Max):

520W (Tc)

Rds On (Max) @ Id, Vgs:

9.7 mOhm @ 81A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:


Package / Case:


IRFP4668PBF Description

Aug 9, 2008 IRFP4668PbF . VDSS. 200V. RDS(on) typ. 8.0m: max. 9.7m: ID. 130A. Absolute Maximum Ratings. Symbol. Parameter. Units. ID @ TC = 25 C. Page 1. 0. 0. 1. 1. 2. 2. 3. 3. 4. 4. 5. 5. 6. 6. 7. 7. 8. 8. 9. 9. 10. 10. 11. 11. A. A. B. B. C. C. D. D. E. E. F. F. V1. 50-84V. R14_1. 0.005 . Q1_1. IRFP4668PbF . Q2_1. R116. 100 . C47. 0.1 F. V1. 21V. V2. 21V. V3. 21V. V4. 21V. MCU+. R119. 0.005 . Q41. IRFP4668PbF . Q42 IRFP4668PbF . R115 load. Charging current. IRFP4668PbF . R44. 100 . R45. 100 . C29. 0.1 F. BAT0. C30. 0.1 F. C31. 0.1 F. BAT0. BAT0. BAT0. R39. 2.2k . R41. 10M . Q3 IRFP4668PbF . R42. 1M . Oct 24, 2007 Description. The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package.
1 - 5 of 5 Record(s)
Hot Offer
 Part NumberBrandD/CQtyCompany


IR20162141Lionfly Tech (HK) International Group Co., Limited   7


INFINEON18+20000TY International Trade Limited    9


IR17+35000Raref Electronics System Limited   4


IR18+50123Shenzhen Senyuan Technology Electronic.Ltd  1

 Part NumberBrandD/CQtyCompany


ir50000Hongkong Shengshi Electronics Limited    5

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IRFP4668PBF Related Keywords in 2019 USA

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