【IRFP4668PBF Transistors - FETs, MOSFETs - Single IR】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IRFP4668PBF

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 200V 130A TO-247AC

Series:

HEXFET

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200V

Current - Continuous Drain (Id) @ 25°C:

130A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Vgs(th) (Max) @ Id:

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

241nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

10720pF @ 50V

Vgs (Max):

±30V

FET Feature:

-

Power Dissipation (Max):

520W (Tc)

Rds On (Max) @ Id, Vgs:

9.7 mOhm @ 81A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247AC

Package / Case:

TO-247-3

IRFP4668PBF Description

Aug 9, 2008 IRFP4668PbF . VDSS. 200V. RDS(on) typ. 8.0m: max. 9.7m: ID. 130A. Absolute Maximum Ratings. Symbol. Parameter. Units. ID @ TC = 25 C. Page 1. 0. 0. 1. 1. 2. 2. 3. 3. 4. 4. 5. 5. 6. 6. 7. 7. 8. 8. 9. 9. 10. 10. 11. 11. A. A. B. B. C. C. D. D. E. E. F. F. V1. 50-84V. R14_1. 0.005 . Q1_1. IRFP4668PbF . Q2_1. R116. 100 . C47. 0.1 F. V1. 21V. V2. 21V. V3. 21V. V4. 21V. MCU+. R119. 0.005 . Q41. IRFP4668PbF . Q42 IRFP4668PbF . R115 load. Charging current. IRFP4668PbF . R44. 100 . R45. 100 . C29. 0.1 F. BAT0. C30. 0.1 F. C31. 0.1 F. BAT0. BAT0. BAT0. R39. 2.2k . R41. 10M . Q3 IRFP4668PbF . R42. 1M . Oct 24, 2007 Description. The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package.
1 - 5 of 5 Record(s)
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IRFP4668PBF Ref.:
[hkinbatch20180720]
[HGCacheDateZOIBIZOP]
[HGReferer_MembershipFee]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

IRFP4668PBF Related Keywords in 2018 USA

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