【IRFPC50 Transistors - FETs, MOSFETs - Single IR】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:



Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single


Vishay Siliconix







FET Type:



MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):


Current - Continuous Drain (Id) @ 25°C:

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):


Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

140nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

2700pF @ 25V

Vgs (Max):


FET Feature:


Power Dissipation (Max):

180W (Tc)

Rds On (Max) @ Id, Vgs:

600 mOhm @ 6A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:


Package / Case:


IRFPC50 Description

IRFPC50 . SiHFPC50. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS. Page 1. Document Number: 90492 www.vishay.com. Revision: 07-Jul-10. 1. R-C Thermal Model Parameters. IRFPC50_RC, SiHFPC50_RC. Vishay Siliconix. Page 1. Document Number: 91241 www.vishay.com. S11-0443-Rev. B, 14-Mar- 11. 1. This datasheet is subject to change without notice. THE PRODUCT Frequency ( IRFPC50 ). RGATE = 10 , VCC = 15V. Frequency (Hz). Figure 31. IR2111 TJ vs. Frequency (IRFBC20). RGATE = 33 , VCC = 15V. Frequency (Hz). Electrically Equivalent to IRFPC50 . MAXIMUM RATINGS. ALL RATINGS ARE AT T. C. = 25 C UNLESS OTHERWISE SPECIFIED. RATING. SYMBOL MIN. TYP.
1 - 5 of 5 Record(s)
 Part NumberBrandD/CQtyCompany


IR1200Belt (HK) Electronics Co    12


IR2015+9000Bonase Electronics (HK) Co., Limited    12


IRF6321Nosin (HK) Electronics Co.    13


IR03+8322Hong Kong In Fortune Electronics Co., Limited    13


Vishay Siliconix1000MY Group (Asia) Limited    13

Related Part Number

IRFP90N20DPBF | IRFP9140 | IRFP90N20DPBF | IRFP9140 | IRFP9140N | IRFP9140NPBF | IRFP9140PBF | IRFP9240 | IRFP9240PBF | IRFPC40 | IRFPC40PBF
IRFPC50 Ref.:

IRFPC50 Related Keywords in 2018 USA

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