【IRFS17N20D Transistors - FETs, MOSFETs - Single IR】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IRFS17N20D

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 200V 16A D2PAK

Series:

HEXFET

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200V

Current - Continuous Drain (Id) @ 25°C:

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

50nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1100pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

3.8W (Ta), 140W (Tc)

Rds On (Max) @ Id, Vgs:

170 mOhm @ 9.8A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

D2PAK

Package / Case:

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

1 - 5 of 5 Record(s)
IRFS17N20D
 Part NumberBrandD/CQtyCompany
STRCWarranty

IRFS17N20D
 

IR16+45000Yingxinyuan INT'L (Group) Limited    15

IRFS17N20D

IR07+10000Far East Electronics Technology Limited    13

IRFS17N20D

IR11+21343Ande Electronics Co., Limited    13

IRFS17N20D

IR08+24300Hong Kong In Fortune Electronics Co., Limited    13

IRFS17N20D

Infineon Technologies1000MY Group (Asia) Limited    13

Related Part Number

IRFS17N20DPBF | IRFS17N20DTRLP | IRFS11N50ATRL | IRFS17N20DPBF | IRFS17N20DTRLP | IRFS17N20DTRR | IRFS23N15D | IRFS23N15DTRLP | IRFS23N20D | IRFS23N20DPBF | IRFS23N20DTRLP
IRFS17N20D Ref.:
[hkinbatch20180720]
[HGCacheDateZOIBIZIS]
[HGReferer_Escrow]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

IRFS17N20D Related Keywords in 2018 USA

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