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【IRFS23N20DPBF】【Transistors - FETs, MOSFETs - Single】【IR/VISHAY】【INFINEON TECHNOLOGIES】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IRFS23N20DPBF

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 200V 24A D2PAK

Series:

HEXFET

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200V

Current - Continuous Drain (Id) @ 25°C:

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

86nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1960pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

3.8W (Ta), 170W (Tc)

Rds On (Max) @ Id, Vgs:

100 mOhm @ 14A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

D2PAK

Package / Case:

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Search For IRFS23N20DPBF - IRFS23N20DPBF Product Information : 

Capacitors, Optoelectronic Displays, Coils
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Part Number Part Number Brand D/C Desc Qty Country /
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Company

IRFS23N20DPBF

IRFS23N20DPBF  IR/VISHAY 16+SOT-252/SOT-263 50000Hong Kong
C & I Semiconductors Co., Limited E-Catalog 8th Year Member

IRFS23N20DPBF

IRFS23N20DPBF  Infineon Techno... 2016+ 1000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IRFS23N20DPBF

IRFS23N20DPBF  IR 2015+D2-PAK 20000China
Bonase Electronics (HK) Co., Limited E-Catalog 12th Year Member

IRFS23N20DPBF

IRFS23N20DPBF  IR 1230TRANS MOSFET N-... 1243USA
Dan-Mar Components Inc. E-Catalog 10th Year Member

IRFS23N20DPBF

IRFS23N20DPBF  Infineon 150China
C-March Electronics Co.,Ltd E-Catalog 6th Year Member

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