【IRFZ44N IR】Electronic Components In Stock Suppliers in 2019【Price】【Datasheet PDF】USA

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IRFZ44N Description

IRFZ44N . HEXFET Power MOSFET. 01/03/01. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 1.5. R CS. Case-to-Sink, Flat, Greased Surface. 0.50. . C/W. R JA. Junction-to-Ambient. . 62. Thermal Resistance www. irf.com. 1. VDSS = 55V. RDS(on) = 17.5m . ID = 49A. S. D. G. TO-220AB. Advanced DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to DESCRIPTION. Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer. Mar 18, 2004 Advanced HEXFET Power MOSFETs from International. Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known. R358. 4K7. 1. 2. U306A. 4077. U306A. 4077. 1. 2. 3. R320. 1M. R320. 1M. 1. 2. C305. 1uF. C305. 1uF. 1. 2. Q320. IRFZ44N /TO. Q320. IRFZ44N /TO. R302. 33K. R302. 33K. 1. 2. U305A. 4077. U305A. 4077. 1. 2. 3. 14. 7. C302. 1uF. C302. 1uF . 1. 2. R315. 4K7. R315. 4K7. 1. 2. Q319. IRFZ44N /TO. Q319. IRFZ44N /TO. J304.
1 - 5 of 5 Record(s)
Hot Offer
 Part NumberBrandD/CQtyCompany


IR2009+40000Hengguang (HK) Electronics Trading Limited   14


IR20000Hongkong Truly Electronics Tech Co.,Ltd   13


IR17+200Anterwell Technology Ltd   14



 Part NumberBrandD/CQtyCompany


IRF09+2500Xinye International Technology Limited    9

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IRFZ44N Related Keywords in 2019 USA

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