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【IRG4BC30FDPBF Transistors - IGBTs - Single IR】【16FHJSM1GBTB】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IRG4BC30FDPBF

Catagory:

Discrete Semiconductor Products > Transistors - IGBTs - Single

Brand:

Infineon Technologies

Description:

IGBT 600V 31A 100W TO220AB

Series:

-

Packaging:

Tube

IGBT Type:

-

Voltage - Collector Emitter Breakdown (Max):

600V

Current - Collector (Ic) (Max):

31A

Current - Collector Pulsed (Icm):

124A

Vce(on) (Max) @ Vge, Ic:

1.8V @ 15V, 17A

Power - Max:

100W

Switching Energy:

630µJ (on), 1.39mJ (off)

Input Type:

Standard

Gate Charge:

51nC

Td (on/off) @ 25°C:

42ns/230ns

Test Condition:

480V, 17A, 23 Ohm, 15V

Reverse Recovery Time (trr):

42ns

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-220-3

Supplier Device Package:

TO-220AB

Search For IRG4BC30FDPBF - IRG4BC30FDPBF Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
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Company

IRG4BC30FDPBF

IRG4BC30FDPBF IR12000Hong Kong
SUNTOP SEMICONDUCTOR CO., LIMITED  3

IRG4BC30FDPBF

IRG4BC30FDPBF International Rectifier17147Hong Kong
HongKong Wanghua Technology Limited 4
Warranty

IRG4BC30FDPBF

IRG4BC30FDPBF IR4000China
Belt (HK) Electronics Co  12

IRG4BC30FDPBF

IRG4BC30FDPBF IR07+1000China
Abundant (HK) International Electronics Limited  5

IRG4BC30FDPBF

IRG4BC30FDPBF 09+35000China
Gaokeda Technology (HK) Limited  10
Warranty

16FHJ-SM1-GB-TB(LF)(SN)

16FHJ-SM1-GB-TB(LF)(SN) JST2014+63800China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  15

16FHJ-SM1-GB-TB(LF)(SN)

16FHJ-SM1-GB-TB(LF)(SN) JST500China
Tianke Electronics (HK) Limited  12

16fhj-sm1-k-tb

16fhj-sm1-k-tb jst2015+48000China
Bonase Electronics (HK) Co., Limited  12
Warranty

16FHJ-SM1-TB

16FHJ-SM1-TB JST35000China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  15

16FHJ-SM1-TB

16FHJ-SM1-TB JST198181China
Hong Kong In Fortune Electronics Co., Limited  13

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