Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 30V 64A D2PAK
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25Â°C:
Drive Voltage (Max Rds On, Min Rds On):
Vgs(th) (Max) @ Id:
1V @ 250ÂµA
Gate Charge (Qg) (Max) @ Vgs:
33nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
1650pF @ 25V
Power Dissipation (Max):
Rds On (Max) @ Id, Vgs:
12 mOhm @ 34A, 10V
-55Â°C ~ 175Â°C (TJ)
Supplier Device Package:
Package / Case:
TO-263-3, DÂ²ÂPak (2 Leads + Tab), TO-263AB
Search For IRL3103S - IRL3103S Product Information :
IRL3103S IRL3103S . IRL3103L. HEXFET Power MOSFET. 02/14/02. Parameter. Typ. Max . Units. R JC. Junction-to-Case. . 1.6. R JA. Junction-to-Ambient (PCB International Rectifier IRL3103S . None. 1. MAX1624 PC board. None. 1. MAX1624 data sheet. R1, R2. 2. 0.012 , 1%, 1W resistors. Dale WSL-2512- R012-F or. Note 1: For the applications where it is desirable to eliminate the heat sink, the IRL3103S for Q2 and. MBR1545CT for D2 in TO-263 packages with minimum of IRL3103S and the FETKY IRL3103D1S,. IRP6VRM1 exceeds the required specification by a wide margin. Fig 10. Typical Tj of Q1 @ Ta = 50 C, still air. Note: For the applications where it is desirable to eliminate the heat sink, the IRL3103S for Q2 and. MBR1545CT for D2 in TO-263 packages with minimum of 1 ...
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