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【IRLHS6376TRPBF】【Transistors - FETs, MOSFETs - Arrays】【IR】【INTERNATIONAL RECTIFIER】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IRLHS6376TRPBF

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Brand:

Infineon Technologies

Description:

MOSFET 2N-CH 30V 3.6A PQFN

Series:

HEXFET

Packaging:

Tape & Reel (TR)

FET Type:

2 N-Channel (Dual)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

3.6A

Rds On (Max) @ Id, Vgs:

63 mOhm @ 3.4A, 4.5V

Vgs(th) (Max) @ Id:

1.1V @ 10µA

Gate Charge (Qg) (Max) @ Vgs:

2.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

270pF @ 25V

Power - Max:

1.5W

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

6-VDFN Exposed Pad

Supplier Device Package:

6-PQFN (2x2)

Search For IRLHS6376TRPBF - IRLHS6376TRPBF Product Information : 

MOSFET 2N-CH 30V 3.6A PQFN Series: HEXFET? Amplifier Type: Applications: Surface Mount Capacitance: 6-VDFN Exposed Pad Connector Type: 6-PQFN (2x2) Function: Circuit: Direction: Inputs - Side 1/Side 2: HKinDataSheet_ZO1GOSIT
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Part Number Part Number Brand D/C Desc Qty Country /
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Company

IRLHS6376TRPBF.

IRLHS6376TRPBF.  IR 13+QFN 19880China
Ande Electronics Co., Limited E-Catalog 12th Year Member

IRLHS6376TRPBF

IRLHS6376TRPBF  International R... 20470Hong Kong
HongKong Wanghua Technology Limited E-Catalog 3rd Year Member

IRLHS6376TRPBF

IRLHS6376TRPBF  Infineon Techno... 2016+ 15000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IRLHS6376TRPBF

IRLHS6376TRPBF  IR 20000Hong Kong
Takson Electronics (H.K.) Co., Ltd. E-Catalog 4th Year Member

IRLHS6376TRPBF

IRLHS6376TRPBF  4000Hong Kong
H.K. Yfxk Electronic Co., Limited 6th Year Member

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[hkinbatch023] [hkingendate20180126] [hkingenidC130615][hkinOfferInventC]
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MOSFET 2N-CH 30V 3.6A 2X2 PQFN Series: HEXFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 3.6A Rds On (Max) @ Id, Vgs: 63 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10米A Gate Charge (Qg) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) @ Vds: 270pF @ 25V Power - Max: 1.5W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-PQFN (2x2) HKinDataSheet_ZO1GOSIT
[HKINOLDPD] [HKIN20171020MDPartDetails]

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