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【IRLL2703TR Transistors - FETs, MOSFETs - Single IR】【1812J2K00151JCT】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IRLL2703TR

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 30V 3.9A SOT223

Series:

HEXFET

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

3.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

14nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

530pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

1W (Ta)

Rds On (Max) @ Id, Vgs:

45 mOhm @ 3.9A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-223

Package / Case:

TO-261-4, TO-261AA

Search For IRLL2703TR - IRLL2703TR Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
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Company
Warranty

IRLL2703TR

IRLL2703TR IR16+20000Taiwan
Yingxinyuan INT'L (Group) Limited  15

IRLL2703TR

IRLL2703TR IR08+24300China
Hong Kong In Fortune Electronics Co., Limited  13

IRLL2703TR

IRLL2703TR Infineon Technologies2016+1000China
MY Group (Asia) Limited  13

IRLL2703TR

IRLL2703TR IR07+25000China
Far East Electronics Technology Limited  12

IRLL2703TR

IRLL2703TR Infineon07+150China
Dopoint Hi-Tech Limited  13

1812J2K00151JCT

1812J2K00151JCT Syfer53300Hong Kong
AIC Semiconductor Co., Limited  5

1812J2K00472MXR

1812J2K00472MXR SYFER16+204890China
Ande Electronics Co., Limited  12
STRC

1812J2K00102JXT

1812J2K00102JXT SYFER07+3000China
HK Hongkai Electronics Limited  12

1812J2000334KXT

1812J2000334KXT SYFER2015+250000China
Bonase Electronics (HK) Co., Limited  12

1812J2500124JXT

1812J2500124JXT SYFER06+1000China
Hong Kong In Fortune Electronics Co., Limited  13

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