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【IS61LV12816L10BI Memory ISSI】【1N5822DO27】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IS61LV12816L10BI

Catagory:

Integrated Circuits (ICs) > Memory

Brand:

ISSI, Integrated Silicon Solution Inc

Description:

IC SRAM 2MBIT 10NS 48MINIBGA

Series:

-

Packaging:

Tray

Memory Type:

Volatile

Memory Format:

SRAM

Technology:

SRAM - Asynchronous

Memory Size:

2Mb (128K x 16)

Clock Frequency:

-

Write Cycle Time - Word, Page:

10ns

Access Time:

10ns

Memory Interface:

Parallel

Voltage - Supply:

3.135 V ~ 3.6 V

Operating Temperature:

-40°C ~ 85°C (TA)

Mounting Type:

Surface Mount

Package / Case:

48-TFBGA

Supplier Device Package:

48-miniBGA (6x8)

Search For IS61LV12816L10BI - IS61LV12816L10BI Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
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Company

IS61LV12816L-10BI

IS61LV12816L-10BI ISSI41764Hong Kong
HongKong Wanghua Technology Limited 4

IS61LV12816L-10BI

IS61LV12816L-10BI ISSI1006+2490China
Sinno Electronics Co., Limited  8

IS61LV12816L-10BI

IS61LV12816L-10BI ISSI13740China
HK Jiaweiyi Technology Limited  12

IS61LV12816L-10BI

IS61LV12816L-10BI 09+3000China
Gaokeda Technology (HK) Limited  10

IS61LV12816L-10BI

IS61LV12816L-10BI ISSI03+5386China
Ocean International Electronics Limited 11
WarrantyNewAndOriginal

1N5822DO-27

1N5822DO-27 1000China
CHIPMALL ELECTRONICS LIMITED  3
STRC

1N5822

1N5822 ON3000China
Kwong Shun Electronics (HK)Co. 13

1N5822

1N5822 MANUFACTURING NOT AVAILABLE20Italy
Ramos S.R.L. 13

1N5822

1N5822 VISHAY144USA
Val Technologies, Inc 15

1N5822

1N5822 ECS4730South Korea
Daejon Electronics6

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1N5822DO27 | IS61LV12816AL10T | 10070D | IS61LV12816AL10TI | IS61LV12816AL12T | ATV750B10DMB | IS61LV12816AL12TI | IS61LV12816L10BLI | IS61LV12816L10K | 100722903
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