【IXA60IF1200NA Transistors - IGBTs - Modules IXYS】【BLF245B112】【XC5512RS1U】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IXA60IF1200NA

Catagory:

Discrete Semiconductor Products > Transistors - IGBTs - Modules

Brand:

IXYS

Description:

IGBT 1200V 88A SOT-227B

Series:

-

IGBT Type:

PT

Configuration:

Single

Voltage - Collector Emitter Breakdown (Max):

1200V

Current - Collector (Ic) (Max):

88A

Power - Max:

290W

Vce(on) (Max) @ Vge, Ic:

2.1V @ 15V, 50A

Current - Collector Cutoff (Max):

100µA

Input Capacitance (Cies) @ Vce:

-

Input:

Standard

NTC Thermistor:

No

Operating Temperature:

-40°C ~ 150°C (TJ)

Mounting Type:

Chassis, Stud Mount

Package / Case:

SOT-227-4, miniBLOC

Supplier Device Package:

SOT-227B

IXA60IF1200NA Description

IXA60IF1200NA . Copack. XPT IGBT. C (3). E (1+4). (G) 2. Part number. IXA60IF1200NA . Backside: isolated. C25. CE(sat). V. V1.8. CES. 88. 1200. = V. = V. IXA60IF1200NA . SOT-227B (minibloc). 1200. Delivery Mode. Quantity. Code No. Ordering Number. Marking on Product. Ordering. 1). 50/60 Hz, RMS; I 1 mA. Apr 23, 2013 IXA20IF1200HB. IXSN55N120AU1. IXA60IF1200NA . IXSH15N120AU1S. IXA20IF1200HB. IXSN62N60U1. IXXN100N60B3H1. IXSH15N120B. IXA60IF1200NA . 5185. 16. 125. 168. 20. 0. 3360. 11. IXBF55N300. TP1243. 25. 125. 1000. 30. 0. 30000. 12. IXBH10N300HV. TS1413. 20. 125. 1000. 30. 0. IXA60IF1200NA . 2613. 960. 125. 1000. 20. 0. 20000. 11. IXBH9N160G. 2446. 1280. 125. 168. 20. 0. 3360. 12. IXBH9N160G. 3075. 1280. 125. 168. 20. 0. 3360 .

BLF245B112 Description

Datasheet Aug 4, 2003 Product specification. Supersedes data of 2000 Oct 17. 2003 Aug 04. DISCRETE SEMICONDUCTORS. BLF245B . VHF push-pull power MOS. Sep 2, 2003 Product specification. Supersedes data of 1997 Dec 17. 2003 Sep 02. DISCRETE SEMICONDUCTORS. BLF245 . VHF power MOS transistor. Jul 3, 2013 BLF642, 112 . 934065183112. BLF642. HF/VHF/UHF power. LDMOS transistor. BLF245B , 112 . 934003520112. BLF245B . VHF push-pull power. Aug 5, 2003 DATA SHEET. Product specification. Supersedes data of 1996 Oct 21. 2003 Aug 05. DISCRETE SEMICONDUCTORS. BLF246. VHF power 112 . 44. 4. 280. BGY835C. 33.5 - 34.5 0.5 - 2.5. 0.5. 20 / 20. -60. -55. 49. 44. 7. 340 BLF245 . 12.5 V, 50 mA. 14 V, 50 mA. BLF246. 14 V, 50 mA. 14 V, 100 mA.
1 - 11 of 11 Record(s)
IXA60IF1200NA, BLF245B112, XC5512RS1U
 Part NumberBrandD/CQtyCompany

IXA60IF1200NA

IXYS35324HongKong Wanghua Technology Limited   3

IXA60IF1200NA

37Yaspro Electronics (Shanghai) Co., Ltd    2

IXA60IF1200NA

IXYS2016+8000MY Group (Asia) Limited    13

IXA60IF1200NA

IXYS08+30Foston Technology Co., Limited  4

IXA60IF1200

IXYS07+50Sino Star Electronics (HK) Co.,Limited   11

BLF245B,112
 

NXP520Top Electronics Co.,    12

BLF245B,112

800Lungke Electronics Technology Co., Limited    7

BLF245B,112

Ampleon USA Inc.2016+8000MY Group (Asia) Limited    13

BLF245B112

NXP17+28000CP MICRO-ELECTRON (HK) INDUSTRIAL CO., LIMITED   1

BLF245B,112

NXP32WIN AND WIN ELECTRONICS LIMITED    1

XC551265CP
 

FREESCALE0408+9Atic (HK) Technology Co., Limited    8

Related Part Number

BLF245B112 | XC5512RS1U | IXA319WJ | IXA319WJN | IXA37IF1200HJ | IXA40I4000KN | IXA418WJ | IXA55I1200HJ | IXA590WJ | IXA60IF1200 | IXA703WJ
IXA60IF1200NA Ref.:
[hkinbatch20171020]
[HGCacheDateZOIBOIZO]
[HGReferer_SD_Ecatalog]
[HKIN20171020GESTYLE]
[HKIN20171020MDPartDetails]

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