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【IXFA10N80P】【Transistors - FETs, MOSFETs - Single】【IXYS】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IXFA10N80P

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET N-CH 800V 10A TO-263

Series:

HiPerFET, PolarHT

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

800V

Current - Continuous Drain (Id) @ 25°C:

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

5.5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs:

40nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

2050pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

300W (Tc)

Rds On (Max) @ Id, Vgs:

1.1 Ohm @ 5A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-263 (IXFA)

Package / Case:

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Search For IXFA10N80P - IXFA10N80P Product Information : 

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Part Number Part Number Brand D/C Desc Qty Country /
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IXFA10N80P

IXFA10N80P  IXYS 13+TO-263 13800Hong Kong
A & C Int'l Electronics Co. E-Catalog 11th Year Member

IXFA10N80P

IXFA10N80P  IXYS 13137Hong Kong
HongKong Wanghua Technology Limited E-Catalog 4th Year Member

IXFA10N80P

IXFA10N80P  IXYS 2016+ 1000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IXFA10N60P

IXFA10N60P  IXYS 13+TO-263 13800Hong Kong
A & C Int'l Electronics Co. E-Catalog 11th Year Member

IXFA10N60P

IXFA10N60P  IXYS 01+TO-263AB 2554China
Xinye International Technology Limited E-Catalog 8th Year Member

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