【IXFH52N30Q Transistors - FETs, MOSFETs - Single IXYS】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IXFH52N30Q

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET N-CH 300V 52A TO-247AD

Series:

HiPerFET

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

300V

Current - Continuous Drain (Id) @ 25°C:

52A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Vgs(th) (Max) @ Id:

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs:

150nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

5300pF @ 25V

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

360W (Tc)

Rds On (Max) @ Id, Vgs:

60 mOhm @ 500mA, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247AD (IXFH)

Package / Case:

TO-247-3

1 - 5 of 5 Record(s)
IXFH52N30Q
 Part NumberBrandD/CQtyCompany

IXFH52N30Q

IXYS02+2125Xinye International Technology Limited    9

IXFH52N30Q

IXYS2015+10000Bonase Electronics (HK) Co., Limited    12

IXFH52N30Q

IXYS14000MY Group (Asia) Limited    13

IXFH52N30Q

IXYS13405HongKong Wanghua Technology Limited   4

IXFH52N30Q

IXYS30300MASSTOCK ELECTRONICS LIMITED    1

Related Part Number

IXFH52N50P2 | IXFH58N20 | IXFH4N100Q | IXFH50N20 | IXFH50N50P3 | IXFH50N60P3 | IXFH50N60X | IXFH52N30P | IXFH52N50P2 | IXFH58N20 | IXFH58N20Q
IXFH52N30Q Ref.:
[hkinbatch20180720]
[HGCacheDateZOIBIIZO]
[HGReferer_SiteMap]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

IXFH52N30Q Related Keywords in 2018 USA

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