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【IXFH52N30Q】【Transistors - FETs, MOSFETs - Single】【IXYS】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IXFH52N30Q

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET N-CH 300V 52A TO-247AD

Series:

HiPerFET

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

300V

Current - Continuous Drain (Id) @ 25°C:

52A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Vgs(th) (Max) @ Id:

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs:

150nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

5300pF @ 25V

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

360W (Tc)

Rds On (Max) @ Id, Vgs:

60 mOhm @ 500mA, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247AD (IXFH)

Package / Case:

TO-247-3

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Part Number Part Number Brand D/C Desc Qty Country /
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Company

IXFH52N30Q

IXFH52N30Q  IXYS 02+TO-247 2125China
Xinye International Technology Limited E-Catalog 8th Year Member

IXFH52N30Q

IXFH52N30Q  IXYS 2015+TO-247 10000China
Bonase Electronics (HK) Co., Limited E-Catalog 12th Year Member

IXFH52N30Q

IXFH52N30Q  IXYS 13405Hong Kong
HongKong Wanghua Technology Limited E-Catalog 4th Year Member

IXFH52N30Q

IXFH52N30Q  IXYS 2016+ 14000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IXFH52N30Q

IXFH52N30Q  IXYS 02+TO-247 2125China
AM SEMI-TECH CO,.LTD E-Catalog 4th Year Member

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