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【IXFN80N50Q2 Transistors - FETs, MOSFETs - Single IXYS】【AD5495JH】【M67575P】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IXFN80N50Q2

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET N-CH 500V 80A SOT-227B

Series:

HiPerFET

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

500V

Current - Continuous Drain (Id) @ 25°C:

80A

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

4.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs:

250nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

12800pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

890W (Tc)

Rds On (Max) @ Id, Vgs:

60 mOhm @ 500mA, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Chassis Mount

Supplier Device Package:

SOT-227B

Package / Case:

SOT-227-4, miniBLOC

Search For IXFN80N50Q2 - IXFN80N50Q2 Product Information : 

IXFN80N50Q2 Datasheet VDS. = VDSS, VGS = 0V. 100 A. TJ = 125 C. 5 mA. RDS(on). VGS = 10V, ID = 40A, Note 1. 65 m . HiperFETTM. Power MOSFET. Q2-Class. IXFN80N50Q2 . V. ...
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Part NumberPart Number BrandD/CQtyCountry /
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Company
STRC

IXFN80N50Q2

IXFN80N50Q2 IXYS123China
Wanzhong Mechanical & Electrical Equipment Limited  14
Warranty

IXFN80N50Q2

IXFN80N50Q2 ChipMall1500China
CHIPMALL ELECTRONICS LIMITED  3

IXFN80N50Q2

IXFN80N50Q2 IXYS43813Hong Kong
HongKong Wanghua Technology Limited 4

IXFN80N50Q2

IXFN80N50Q2 2China
Beijing Circle World(HuanQiuChangTong) Electronics Co., Ltd  1

IXFN80N50Q2

IXFN80N50Q2 IXYS2016+1000China
MY Group (Asia) Limited  13
STRC

AD5495JH

AD5495JH AD100China
Kang Da Electronics Co.  13

AD5495JH

AD5495JH AD2015+200Hong Kong
Hong Kong Red Top Boat Development Co., Limited  2

M67575P

M67575P MIT0422+3230China
Jete (HK) Electronics Limited 3

M67575FP

M67575FP MIT0422+3230China
Jete (HK) Electronics Limited 3

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