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【IXFT13N80Q】【Transistors - FETs, MOSFETs - Single】【IXYS】【BELFUSE】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IXFT13N80Q

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET N-CH 800V 13A TO-268

Series:

HiPerFET

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

800V

Current - Continuous Drain (Id) @ 25°C:

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

4.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs:

90nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

3250pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

250W (Tc)

Rds On (Max) @ Id, Vgs:

700 mOhm @ 6.5A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-268

Package / Case:

TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA

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Part Number Part Number Brand D/C Desc Qty Country /
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IXFT13N80Q

IXFT13N80Q  900China
CHIPMALL ELECTRONICS LIMITED E-Catalog 3rd Year Member

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IXFT13N80Q

IXFT13N80Q  IXYS 13+TO-268/D3PAK 13800Hong Kong
A & C Int'l Electronics Co. E-Catalog 11th Year Member

IXFT13N80Q

IXFT13N80Q  BELFUSE 29USA
Chip 1 Exchange USA, Inc. E-Catalog 1st Year Member

IXFT13N80Q

IXFT13N80Q  IXYS POWER 17+Phase out/Obsol... 500China
North Star Technology (HK) Co.,Ltd E-Catalog 1st Year Member

IXFT13N100

IXFT13N100  IXYS 13+TO-268/D3PAK 13800Hong Kong
A & C Int'l Electronics Co. E-Catalog 11th Year Member

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