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【IXFT36N60P】【Transistors - FETs, MOSFETs - Single】【IXYS】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IXFT36N60P

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET N-CH 600V 36A TO-268 D3

Series:

HiPerFET, PolarHT

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600V

Current - Continuous Drain (Id) @ 25°C:

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs:

102nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

5800pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

650W (Tc)

Rds On (Max) @ Id, Vgs:

190 mOhm @ 18A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-268

Package / Case:

TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA

Search For IXFT36N60P - IXFT36N60P Product Information : 

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Part Number Part Number Brand D/C Desc Qty Country /
Region
Company

IXFT36N60P

IXFT36N60P  IXYS 13+TO-268 13800Hong Kong
A & C Int'l Electronics Co. E-Catalog 10th Year Member

IXFT36N60P

IXFT36N60P  IXYS 01+TO-264 1254China
Xinye International Technology Limited E-Catalog 8th Year Member

IXFT36N60P

IXFT36N60P  IXYS 01+TO-264 1254China
AM SEMI-TECH CO,.LTD E-Catalog 4th Year Member

IXFT36N50P

IXFT36N50P  IXYS 04+SOJ-28 3200China
CHIPMALL ELECTRONICS LIMITED E-Catalog 3rd Year Member

Buy Online

IXFT36N50P

IXFT36N50P  IXYS 2016+ 14000China
MY Group (Asia) Limited E-Catalog 13th Year Member

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